초록

A method for cleaning semiconductor wafers prior to the sputter deposition of a metal is disclosed. Introducing a mixture of ninety percent argon and ten percent freon to a sputter deposition system to sputter etch the wafers thereby allowing for the removal of unwanted oxide.

대표청구항 ▼

A method for a reactive sputter clean followed by a sputter deposition of a metal on a semiconductor wafer, comprising the steps of; loading the semiconductor wafer into a sputter deposition system containing an argon atmosphere; adding a CF4 gas to the argon atmosphere; activating the sputter syste

A method for a reactive sputter clean followed by a sputter deposition of a metal on a semiconductor wafer, comprising the steps of; loading the semiconductor wafer into a sputter deposition system containing an argon atmosphere; adding a CF4 gas to the argon atmosphere; activating the sputter system and etching the residual oxide from select regions on the semiconductor wafer; stopping the flow of CF4 to the sputter system after a predetermined time while maintaining the argon atmosphere; and sputter depositing a metal on the semiconductor wafer.