초록 ▼

In a device comprising N lines and M columns of infrared-sensitive photodiodes, the charges derived from the detectors of one column are integrated in a first series of capacitors. MOS transistors connect the first series of capacitors to a second series in order to produce a distribution of charges

In a device comprising N lines and M columns of infrared-sensitive photodiodes, the charges derived from the detectors of one column are integrated in a first series of capacitors. MOS transistors connect the first series of capacitors to a second series in order to produce a distribution of charges between these capacitors. MOS transistors mounted as emitter-followers read the level of charges within the second capacitors while integration of the charges takes place in the first capacitors of the detectors of the next column. The detectors and the remainder of the device are integrated on two different semiconductor substrates but the device as a whole is integrated in one cryostat having a single output.

대표청구항 ▼

A photosensitive device for infrared radiation comprising: a network of N lines and M columns of infrared detectors integrated on a first semiconductor for substrate; a first MOS transistor connected to each detector and to a first and a second electrode arrays in which one array connects the MOS tr

A photosensitive device for infrared radiation comprising: a network of N lines and M columns of infrared detectors integrated on a first semiconductor for substrate; a first MOS transistor connected to each detector and to a first and a second electrode arrays in which one array connects the MOS transistors associated with the detectors of one line and the other array connects the transistors associated with the detectors of one column, and a first shift register which successively addresses the electrodes of the first electrode array, the MOS transistors and the register being integrated on a second semiconductor substrate and placed within a cryostat with the detectors; means connected to each electrode of the second electrode array for carrying out integration of the charges corresponding to the radiation received by the detectors connected to each electrode of the first array and for carrying out serial reading of the integrated charges, wherein said means comprise the following elements which are integrated in the second semiconductor substrate and placed within the cryostat: a first capacitor connected to each electrode of the second array, integration of the charges corresponding to the radiation received by the detectors connected to the electrode of the first array addressed by the first shift register being performed by said first capacitor, said first capacitor being connected to a second capacitor by a second MOS transistor in order to produce a distribution of the said charges beneath the first and the second capacitor; means for carrying out serial reading in the second capacitors of the level of said charges during integration within the first capacitors of the charges corresponding to the radiation received by the detectors connected to the electrode of the first array addressed by the first shift register.