초록 ▼

An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has

An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO2, 0-2.3% SiO2, 58.6-78.5% PbO, 0-5.3% PbF2, 7-13% B2O3, 2.5-6.9% Al2O3, 0-5.3% ZnO, 0.4-2.3% V2O5, 0-5.3% CdO, and 6.2-9.6% TiO2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO2, 45-55% PbO, 8-12% ZnO, 2-5% Al2O3, and 25-30% B2O3.

대표청구항 ▼

A method for bonding a ductile foil having a predetermined foil melting temperature to a ceramic base comprising: providing a ceramic base of predetermined base coefficient of expansion and base melting temperature; locating said ductile foil above said ceramic base; placing a substantially alkali-f

A method for bonding a ductile foil having a predetermined foil melting temperature to a ceramic base comprising: providing a ceramic base of predetermined base coefficient of expansion and base melting temperature; locating said ductile foil above said ceramic base; placing a substantially alkali-free bonding glass between said foil and said ceramic base to form an assembly, said bonding glass having a predetermined glass softening temperature less than said foil and base melting temperatures and a predetermined glass coefficient of expansion, wherein said glass coefficient of expansion is smaller than said base coefficient of expansion; wherein said bonding glass comprises ingredients by weight percent in the range of SiO2 (10-15%), PbO (45-55%), ZnO (8-12%), Al2O3 (2-5%), and B2O3 (25-30%); and applying heat and pressure to said assembly, said heat being sufficient to raise the temperature of said assembly so as to be in a range greater than said glass softening temperature, but less than said foil and base melting temperatures, and said pressure being sufficient to cause plastic flow of said glass to substantially eliminate voids between said base and said foil.