초록 ▼

Oxide (RmOn) films are grown by evaporation from separate sources of element (R) and an oxide (MrOs) which serves as the oxygen source. The oxide (MrOs) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (MrOs) can re

Oxide (RmOn) films are grown by evaporation from separate sources of element (R) and an oxide (MrOs) which serves as the oxygen source. The oxide (MrOs) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (MrOs) can react with the element (R) to form another oxide (RmOn) that is thermodynamically more stable: mR+MrOs→RmOn+MrOs-n Using this technique, films of Al2O3, MgO, SiO2, and MgAl2O4 have been grown using As2O3 or Sb2O3 as the oxygen source.

대표청구항 ▼

A method of fabricating a device including an oxide film RmOn, where R is at least one metal or at least one semiconductor, or combination thereof, and m and n are integers, comprising the steps of: (a) mounting a substrate in a chamber, (b) providing in the chamber a solid source of an oxygen compo

A method of fabricating a device including an oxide film RmOn, where R is at least one metal or at least one semiconductor, or combination thereof, and m and n are integers, comprising the steps of: (a) mounting a substrate in a chamber, (b) providing in the chamber a solid source of an oxygen compound, which is separate from the substrate and which does not contain R, (c) providing an unoxidized source of R in the chamber, and (d) heating the sources to evaporation, the evaporants reacting to form the oxide film RmOn on the substrate.