초록 ▼

A display with a number of light-emitting semiconductor components such as a luminescent diode has as low as possible an optical cross-talk. It is constructed on a substrate on the rear side of which self-adjusting area portions of an original entire-area metallization have been left as counter elec

A display with a number of light-emitting semiconductor components such as a luminescent diode has as low as possible an optical cross-talk. It is constructed on a substrate on the rear side of which self-adjusting area portions of an original entire-area metallization have been left as counter electrodes. Material of the substrate bordering on the rear side in the intervals between the counter electrodes is made greatly absorbing or poorly reflecting, preferably through conversion into an amorphous state.

대표청구항 ▼

An array of light-active semiconductor components for light-emitting or light-detecting, comprising: a plurality of individual light-active semiconductor components in an at least essentially monocrystalline semiconductor material substrate transmissive to light, a front side of said substrate being

An array of light-active semiconductor components for light-emitting or light-detecting, comprising: a plurality of individual light-active semiconductor components in an at least essentially monocrystalline semiconductor material substrate transmissive to light, a front side of said substrate being provided as a light transmissive surface on which at a spacing from one another, respective front side electric contact electrodes of said individual components are provided; on a rear side of said substrate corresponding individual respective counter electrodes being provided in alignment relative to said respective front side electrodes; in said substrate, a light-active zone being disposed substantially at a PN junction in proximity to said front side; and at intervals between said counter electrodes, regions of said semiconductor material of said substrate zone bordering on the rear side and rearwardly of the PN junction being strongly absorbing for generated light relative to a remainder of the substrate.