초록 ▼

A method of galvanic manufacture of bump-like lead contacts of semiconductor components. The lead contacts are formed of etchable metals having a surface coating of gold. The gold is chemically deposited onto the lead contacts in a first and in a second work step. In the first work step, the deposit

A method of galvanic manufacture of bump-like lead contacts of semiconductor components. The lead contacts are formed of etchable metals having a surface coating of gold. The gold is chemically deposited onto the lead contacts in a first and in a second work step. In the first work step, the deposition occurs to a thickness of 10 to 200 nm, and in the second work step to a thickness of 50 to 200 nm. Etching processes and a tempering occur between the two work steps. The surface layer applied in the first work step is employed during the etching processes as an etching mask for the lead contacts. This surface layer then diffuses into the lead contacts during the tempering. The solderablity of the lead contacts is thus preserved over a longer than usual time span (factor of 20).

대표청구항 ▼

In a method for galvanic manufacture of bump-like lead contacts on a semiconductor circuit, and wherein the lead contacts are formed of an etchable metal having a surface coating of gold, and wherein under the bump-like lead contacts a thin, metallic layer sequence is provided as an adhesion layer a

In a method for galvanic manufacture of bump-like lead contacts on a semiconductor circuit, and wherein the lead contacts are formed of an etchable metal having a surface coating of gold, and wherein under the bump-like lead contacts a thin, metallic layer sequence is provided as an adhesion layer and diffusion barrier between the lead contacts and a surface of the semiconductor circuit, wherein the improvement comprises: after forming the metallic layer sequence on the surface of the semiconductor circuit, electrodepositing the bump-like lead contacts on the thin, metallic layer sequence, and thereafter applying a first coating of gold on the bump-like lead contacts; employing the first gold coating as an etching protection for a subsequent etching to remove portions of the thin, metallic layer sequence not lying beneath the bump-like lead contacts; tempering the circuit and lead contacts so that the first gold layer diffuses into the bump-like lead contacts in a region of a surface of the lead contacts; and providing a second gold layer on the lead contacts, said second gold layer being substantially prevented from diffusing into the lead contacts by the diffused-in first gold layer near the surface of the lead contacts.