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특허 상세정보

Process for fabricating a wraparound contact solar cell

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-031/18   
미국특허분류(USC) 29/572 ; 136/256 ; 29/591 ; 29/583
출원번호 US-0605319 (1984-04-30)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 39  인용 특허 : 1
초록

We disclose and claim a process for fabricating wraparound solar cells wherein vertical slots are scribed in a semiconductor wafer to initially define the lateral dimensions of the cell. Thereafter, photolithographic masking, etching and diffusion steps are used to define the geometry of a p-n junction of the cell. Then, using lift-off photolithography and a multiple-element metal deposition process, the solar cell grid lines are formed on one surface of the cell and p- and n-type metal contacts are extended around to the opposite surface of the cell. In...

대표
청구항

A process for fabricating a wraparound contact solar cell comprising: (a) providing a silicon substrate of a chosen size and shape having first and second opposed major surfaces, (b) forming openings in said substrate and extending through said substrate from said first major surface thereof to said second major surface and spaced apart by a desired lateral dimension of a solar cell, (c) processing said substrate to form a p-n junction therein and between said openings, whereby the vertical walls of said substrate defining said openings are exposed for o...

이 특허를 인용한 특허 피인용횟수: 39

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