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A packaged semiconductor device structure includes a semiconductor chip with an organic material covering thereon. The semiconductor chip is placed in a package and hermetically sealed with a low melting point glass. The organic covering serve to suppress undesirable influence on the semiconductor c

A packaged semiconductor device structure includes a semiconductor chip with an organic material covering thereon. The semiconductor chip is placed in a package and hermetically sealed with a low melting point glass. The organic covering serve to suppress undesirable influence on the semiconductor chip by a

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A packaged semiconductor device structure comprising: a ceramic base portion having lower and upper surfaces; a semiconductor chip fixed on a first area of said upper surface of the base portion and having a memory circuit; an organic shielding material formed on at least a part of the surface of sa

A packaged semiconductor device structure comprising: a ceramic base portion having lower and upper surfaces; a semiconductor chip fixed on a first area of said upper surface of the base portion and having a memory circuit; an organic shielding material formed on at least a part of the surface of said semiconductor chip for shielding the semiconductor chip from alpha-particles radiated from said ceramic cap portion; and a ceramic cap portion having lower and upper surfaces and hermetically connected at an area of its lower surface to a second area of the upper surface of the base portion with a low melting point glass material, said second area surrounding said first area, said ceramic cap and base portions forming a hollow space in which said semiconductor chip is located, the hermetic connection being formed at a temperature at which the organic material can decompose and produce a gas, whereby the gas pressure in the hollow space can increase to thereby lower the mechanical strength of the connection and adversely affect metallization connections of the semiconductor chip; wherein a getter material is disposed in said hollow space at a portion of said hollow space surrounding said semiconductor chip covered with said organic shielding material, for gettering said gas produced in said portion of the hollow space by said organic shielding material at a temperature which occurs when the cap portion is connected to the base portion with said low melting point glass material, thereby preventing increase of gas pressure in the hollow space and the resultant lowering of the mechanical strength of the connection, and thereby preventing an adverse effect on the metallization connections of the semiconductor chip due to said gas.