초록 ▼

An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed ove

An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed over the surface of said grooves (13-1 through 13-6) and said islands and a selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.

대표청구항 ▼

The method of forming an isolated semiconductor structure comprising: forming active devices or selected components in to-be-formed islands of semiconductor material, each island being separated from adjacent islands by a band of semiconductor material in which are formed no active devices, said act

The method of forming an isolated semiconductor structure comprising: forming active devices or selected components in to-be-formed islands of semiconductor material, each island being separated from adjacent islands by a band of semiconductor material in which are formed no active devices, said active devices being formed by placing selected dopants in said to-be-formed islands to form selectively doped regions in said islands; etching grooves in the surface of the semiconductor material so as to remove a portion of each band in which no active devices were formed, thereby to create a plurality of islands of semiconductor material, each island containing active devices; oxidizing the semiconductor material exposed by said grooves to form an oxide layer of selected thickness over the surface of said grooves; forming and smoothing a glass film on the resulting structure by (a) reacting a gaseous mixture of germane and silane with oxygen at a reaction temperature of from 350°-500°C. to form a mixed germanium oxide/silicon oxide glass vapor; (b) depositing said glass mixture vapor on said resulting structure as a film, said germanium oxide being about 50 mole percent of the germanium oxide/silicon oxide glass mixture; and (c) reflowing the resulting glass film at a temperature range of approximately 650°C. to 1000°C. to smooth the surface topography of the film to an essentially flat surface.