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Vacuum deposition system with improved mass flow control

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-013/08
출원번호 US-0792729 (1985-10-30)
발명자 / 주소
  • Barbee Steven G. (Dover Plains NY) Devine Gregory P. (Poughguag NY) Patrick William J. (Newburgh NY) Seeley Gerard (Wappingers Falls NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 50  인용 특허 : 7

초록

A system and method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gase

대표청구항

A system for forming a layer of a material upon a surface from a gas comprising: a reservoir for heating a material from which said gas is propagated; a low pressure reactor wherein said layer is formed; connecting means between said reservoir and said reactor; means connected to the outlet of said

이 특허에 인용된 특허 (7)

  1. Jolly Stuart Talbot (Yardley PA), Accurate control during vapor phase epitaxy.
  2. Blair Richard F. (Fountain Valley CA) Beazley Ralph (Rancho Palos Verdes CA), Calibratable system for measuring fluid flow.
  3. Rose John W. (Scottsdale AZ), Deposition and diffusion source control means and method.
  4. Suzuki Toshiyuki (Tokyo JPX) Nakamura Kazuo (Tokyo JPX), Gas discharge device comprising a pressure controller for controlling a pressure over a wide range.
  5. Burt Dan L. (Phoenix AZ) Taraci Richard F. (Phoenix AZ) Zavion John E. (Mesa AZ), Method for forming a deposited silicon dioxide layer on a semiconductor wafer.
  6. McMenamin Joseph C. (Fresno CA), Vapor mass flow control system.
  7. McMenamin Joseph C. (Oceanside CA), Vapor mass flow control system.

이 특허를 인용한 특허 (50)

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  2. Otoshi,Hirokazu; Izawa,Hiroshi; Tanaka,Masatoshi, Apparatus and method for forming deposited film.
  3. Derderian, Garo J.; Sandhu, Gurtej S., Apparatus for improved delivery of metastable species.
  4. Page ; Jr. Theron V. (Lake Oswego OR) Boydston Thomas F. (Tualatine OR) Posa John G. (Tigard OR), Apparatus to provide a vaporized reactant for chemical-vapor deposition.
  5. Page ; Jr. Theron V. (Lake Oswego OR) Boydston Thomas F. (Tualatine OR) Posa John G. (Tigard OR), Apparatus to provide a vaporized reactant for chemical-vapor deposition.
  6. Hertzler,Benjamin Lee; Shay,Robert Harrison; Botelho,Alexandre de Almeida, Assembly and method for containing, receiving and storing fluids and for dispensing gas from a fluid control and gas delivery assembly having an integrated fluid flow restrictor.
  7. White, George W.; Vijay, Francis, Bone anchor suture-loading system, method and apparatus.
  8. William M. Porteous ; John Mathew, Chemical processing using a dual feeder system, a sample port assembly, and a fluid flow control system.
  9. Mardian,Allen P.; Campbell,Philip H.; Carpenter,Craig M.; Mercil,Randy W.; Sharan,Sujit, Chemical vapor deposition apparatus and deposition method.
  10. Mardian,Allen P.; Campbell,Philip H.; Carpenter,Craig M.; Mercil,Randy W.; Sharan,Sujit, Chemical vapor deposition method.
  11. Carpenter,Craig M.; Dando,Ross S., Chemical vapor deposition methods.
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  13. Bang,Won; Wang,Yen Kun; Kao,Yeh Jen, Concentration profile on demand gas delivery system (individual divert delivery system).
  14. Horsky, Thomas N.; Milgate, III, Robert W., Controlling the flow of vapors sublimated from solids.
  15. Derderian,Garo J.; Sandhu,Gurtej S., Deposition methods for improved delivery of metastable species.
  16. Takasu Katsuji,JPX ; Tsuda Hisanori,JPX ; Sano Masafumi,JPX ; Hirai Yutaka,JPX, Device for forming deposited film.
  17. Nagashima Naoki,JPX ; Takahashi Natsuki,JPX ; Negishi Toshio,JPX, Evaporation apparatus.
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  20. Halpin, Michael W., Exhaust system for vapor deposition reactor and method of using the same.
  21. Nishino, Kouji; Dohi, Ryousuke; Nagase, Masaaki; Hirata, Kaoru; Sugita, Katsuyuki; Ikeda, Nobukazu, Gas supply system for semiconductor manufacturing facilities.
  22. Kikuchi Fumihide,JPX, Heating unit for vaporizing sample by heating.
  23. Shimmura, Satoshi; Fukuoka, Tetsuo; Kitano, Takahiro, Hydrophobicizing apparatus, hydrophobicizing method and storage medium.
  24. Stauffer Craig M. (3066 Scott Blvd. Santa Clara CA 95054), Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing.
  25. Rolfson J. Brett ; Hochhalter Elton, Method and apparatus for controlling rate of pressure change in a vacuum process chamber.
  26. Strang,Eric J., Method and apparatus for determining consumable lifetime.
  27. Horsky, Thomas N.; Milgate, III, Robert W.; Sacco, Jr., George P.; Jacobson, Dale C.; Krull, Wade A., Method and apparatus for extending equipment uptime in ion implantation.
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  29. Strang, Eric J., Method and apparatus for gas injection system with minimum particulate contamination.
  30. Shinagawa Keisuke,JPX ; Fujimura Shuzo,JPX ; Matoba Yuuji,JPX ; Nakano Yoshimasa,JPX ; Takeuchi Tatsuya,JPX ; Miyanaga Takeshi,JPX, Method for controlling apparatus for supplying steam for ashing process.
  31. Cook, Kevin S.; Manning, Dennis; McIntyre, Edward K.; Goldberg, Richard, Method for extending equipment uptime in ion implantation.
  32. Yukihiro Hayakawa JP; Yasushi Kawasumi JP; Kenji Makino JP; Yuzo Kataoka JP, Method for forming a thin film using a gas.
  33. Takasu Katsuji,JPX ; Tsuda Hisanori,JPX ; Sano Masafumi,JPX ; Hirai Yutaka,JPX, Method for forming deposited film.
  34. Wang David Nin-Kou ; White John M. ; Law Kam S. ; Leung Cissy ; Umotoy Salvador P. ; Collins Kenneth S. ; Adamik John A. ; Perlov Ilya ; Maydan Dan, Method for protecting against deposition on a selected region of a substrate.
  35. Sato Kazuo (Tokyo JPX), Method for supplying metal organic gas and an apparatus for realizing same.
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  40. Slevin, Damien; Laird, Brad; Bailey, Curtis; Li, Ming; Reddy, Sirish; Sims, James; Sabri, Mohamed; Sangplug, Saangrut, Precursor vapor generation and delivery system with filters and filter monitoring system.
  41. Yelverton, Mark E.; Campbell, Mark A., Process line purge system and method.
  42. Clark, William R., Pulsed mass flow delivery system and method.
  43. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
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  45. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  46. Shinagawa Keisuke,JPX ; Fujimura Shuzo,JPX ; Matoba Yuuji,JPX ; Nakano Yoshimasa,JPX ; Takeuchi Tatsuya,JPX ; Miyanaga Takeshi,JPX, Steam supplying apparatus and method for controlling same.
  47. Pearlstein,Ronald Martin; Langan,John Giles; Zheng,Dao Hong; Irven,John; Hertzler,Benjamin Lee, Sub-atmospheric gas delivery method and apparatus.
  48. Hinkle Luke D. ; Lischer D. Jeffrey, System for delivering a substantially constant vapor flow to a chemical process reactor.
  49. Hayakawa Yukihiro,JPX ; Kawasumi Yasushi,JPX ; Makino Kenji,JPX ; Kataoka Yuzo,JPX, Thin film formation on semiconductor wafer.
  50. Chen, Huaichao, Vapor cracking catalyst, preparation method thereof, and combustion method of hydrogen obtained by vapor cracking.
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