초록 ▼

An optical system for determining and reproducing spatial separation of features in the range of 80 Åto 2500 Åfor optical microscopy and lithography using visible light, the system being independent of the wavelength of the incident light. An aperture mask is provided having at least one aperture of

An optical system for determining and reproducing spatial separation of features in the range of 80 Åto 2500 Åfor optical microscopy and lithography using visible light, the system being independent of the wavelength of the incident light. An aperture mask is provided having at least one aperture of between about 80 Åand 2500 Ådiameter. The mask may be used in optical microscopy to view objects with a high degree of resolution by placing the mask within the near field of light emanating from a sample to be viewed. The mask may also be used for high resolution optical lithography by placing a resist material within the near field of light passing through the mask.

대표청구항 ▼

A method of making an aperture mask for passing spectral phenomena having a wavelength greater than the diameter of the mask aperture, comprising: depositing by vapor deposition a support layer on the bottom surface of a thin substrate, said substrate having a central opening sufficiently large to e

A method of making an aperture mask for passing spectral phenomena having a wavelength greater than the diameter of the mask aperture, comprising: depositing by vapor deposition a support layer on the bottom surface of a thin substrate, said substrate having a central opening sufficiently large to encompass all of the apertures of said aperture mask, said support layer spanning said central opening; depositing by vapor deposition a resist layer on the top surface of said thin substrate and on the top surface of said support layer in the area of said central opening, whereby said resist layer spans said central opening; removing said support layer, whereby said resist layer is self-supporting over said central opening; producing by electron beam etching at least one aperture through said resist layer within the area of said central opening, each said aperture having a diameter of less than about 500 Å; depositing by vapor deposition to a thickness of about 500 Åa first metal layer on the bottom surface of said thin metal support and on the bottom surface of said resist layer exposed within the area of said central opening, said first metal layer having apertures corresponding to the apertures formed in said resist layer; and removing said resist layer to provide a free-standing optically opaque mask having at least one aperture.