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Method for machining workpieces of brittle hard material into wafers

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-007/22
출원번호 US-0865599 (1986-05-22)
우선권정보 DE-3218656 (1982-08-30); DE-3302881 (1983-08-03); DE-0330881 (1983-08-03); DE-3339942 (1983-11-04)
발명자 / 주소
  • Brandt Georg (Erlangen DEX)
출원인 / 주소
  • GMN Georg Muller Nurnberg GmbH (DEX 03)
인용정보 피인용 횟수 : 37  인용 특허 : 1

초록

A method for machining a disk-shaped workpiece, for example having a thickness of between 350 and 1200 microns, formed of brittle crystalline material having a Vickers hardness greater than about 7,000 N/mm2 in the manufacture of a wafer having a fine thickness, such as in the range of between about

대표청구항

A method for machining a workpiece having an as-cut finish formed of a brittle crystalline semiconductor material having a Vickers hardness greater than about 7,000 N/mm2 in the manufacture of a semiconductor wafer having a fine thickness with a finished surface in a single operation, comprising the

이 특허에 인용된 특허 (1)

  1. Lampert Ingolf (Burghausen DT), Process for preparing haze free semiconductor surfaces and surfaces so made.

이 특허를 인용한 특허 (37)

  1. Coad, Eric C.; O'Neill, David G., Abrasive article comprising a structured diamond-like carbon coating and method of using same to mechanically treat a substrate.
  2. Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
  3. Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
  4. Elmar Wittenzellner,DEX ; Sekiya Kenichi,JPX, Apparatus and method for machining workpieces by flushing working liquid to the tool-and-workpiece interface.
  5. Feldmeier Fritz (Nuremberg DEX), Apparatus for manufacturing and handling thin wafers.
  6. Merrill Daniel L. (Grand Haven MI) Synder John R. (New Era MI) Eckholm ; Jr. Chuck O. (Montague MI) Sunday Steve M. (Rothbury MI) Seaver John L. (Montague MI), Disc with coolant passages for an abrasive machining assembly.
  7. Takahashi Toshio,JPX ; Yonekawa Minoru,JPX ; Aiyama Fumihiko,JPX, Disk cleaner device.
  8. Kim,Jong su, Grinding assembly of semiconductor wafer back-grinding apparatus and method of fastening a grinding plate to a grinding mount of the same.
  9. Herrman James A. ; Meyer Ronald A. ; Stitt Douglas R. ; Woodard Robert L., Grinding device and method.
  10. James A. Herrman ; Ronald A. Meyer ; Douglas R. Stitt ; Robert L. Woodard, Grinding device and method.
  11. Tanaka, Yasuo, Grinding machine having grinder head and method of manufacturing semiconductor device by using the grinding machine.
  12. Hashimoto Hiroshi,JPX, Grinding tool.
  13. Robinson Karl M. ; Stroupe Hugh, High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers.
  14. Karl M. Robinson ; Hugh Stroupe, High-speed planarizing apparatus for chemical-mechanical planarization of semiconductor wafers.
  15. Robinson Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.
  16. Robinson, Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.
  17. Robinson Karl M., Method and apparatus for increasing-chemical-polishing selectivity.
  18. Mendelson Ronald Lee ; Cook Robert Francis ; Diefenderfer David Frederick ; Liniger Eric Gerhard ; Blondin John M. ; Brouillette Donald W., Method and apparatus for preventing chip breakage during semiconductor manufacturing using wafer grinding striation inf.
  19. Mendelson Ronald Lee ; Cook Robert Francis ; Diefenderfer David Frederick ; Liniger Eric Gerhard ; Blondin John M. ; Brouillette Donald W., Method and apparatus for preventing chip breakage during semiconductor manufacturing using wafer grinding striation information.
  20. Feldmeier Fritz (Nuremberg DEX), Method for manufacturing and handling thin wafers.
  21. Heilmaier,Alexander; Drexler,Robert; Huber,Anton; Weiss,Robert, Method for removing material from a semiconductor wafer.
  22. Sandhu, Gurtej S.; Schultz, Laurence D.; Doan, Trung T., Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers.
  23. Nishioka Takao (Itami JPX) Matsunuma Kenji (Itami JPX) Yamakawa Akira (Itami JPX), Method of machining silicon nitride ceramics and silicon nitride ceramics products.
  24. Bruxvoort Wesley J. ; Culler Scott R. ; Ho Kwok-Lun ; Kaisaki David A. ; Kessel Carl R. ; Klun Thomas P. ; Kranz Heather K. ; Messner Robert P. ; Webb Richard J. ; Williams Julia P., Method of modifying an exposed surface of a semiconductor wafer.
  25. Vandamme Roland ; Xin Yun-Biao ; Pei Zhijian, Method of processing semiconductor wafers.
  26. Xin Yun-Biao, Method of processing semiconductor wafers to build in back surface damage.
  27. Tuttle, Mark E., Polishing pad with controlled abrasion rate.
  28. Muldowney, Gregory P., Polishing pad with optimized grooves and method of forming same.
  29. Tuttle Mark E. (Boise ID), Polishing pad with uniform abrasion.
  30. Kazuo Takahashi JP; Mikichi Ban JP; Matsuomi Nishimura JP; Shinzo Uchiyama JP; Takashi Kamono JP, Precise polishing apparatus and method.
  31. Takahashi, Kazuo; Ban, Mikichi; Nishimura, Matsuomi; Uchiyama, Shinzo; Kamono, Takashi, Precise polishing apparatus and method.
  32. Rose Peter H. ; Sferlazzo Piero, Processing a surface.
  33. Sandhu, Gurtej Singh; Yu, Chris Chang, Semiconductor wafer for improved chemical-mechanical polishing over large area features.
  34. Okita, Kyoko; Ishibashi, Keiji, Silicon carbide single-crystal substrate.
  35. Okita, Kyoko; Ishibashi, Keiji, Silicon carbide single-crystal substrate.
  36. Okita, Kyoko; Ishibashi, Keiji, Silicon carbide single-crystal substrate and method for manufacturing same.
  37. Kulkarni Milind ; Desai AnKur, Silicon wafering process flow.
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