초록 ▼

A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the i

A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the interface between the front contact and the front surface of the cell. The solar cell preferably is formed of either n-type or p-type silicon, with the p-n junction preferably formed therein by ion implantation. Preferably, the solar cell is about 50 micrometers thick and, possesses a conversion efficiency of at least 15% over an input intensity range of from about one to about 1,000 suns. The solar cell is particularly useful for concentrator solar cells intended for operation at high intensity (in excess of 500 suns).

대표청구항 ▼

A solar cell comprising: (a) a semiconductor wafer having a front surface and a back surface; and (b) a p-n junction provided at said back surface thereof; (c) said front surface provided with a metallic front contact and being lightly doped to reduce contact resistance at the interface between said

A solar cell comprising: (a) a semiconductor wafer having a front surface and a back surface; and (b) a p-n junction provided at said back surface thereof; (c) said front surface provided with a metallic front contact and being lightly doped to reduce contact resistance at the interface between said metallic front contact and said semiconductor wafer; (d) said p-n junction at said back surface being patterned; (e) said solar cell having a conversion efficiency of at least 15% over an input intensity range from about one sun to about 1,000 suns.