초록 ▼

Compounds having the formula (MX3)n M′X4-n wherein M and M′are different Group 4A atoms, at least one of M and M′is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful a

Compounds having the formula (MX3)n M′X4-n wherein M and M′are different Group 4A atoms, at least one of M and M′is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX3)m L X3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula YJX2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.

대표청구항 ▼

A process for preparing hydrogenated amorphous silicon alloy by deposition of hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more c

A process for preparing hydrogenated amorphous silicon alloy by deposition of hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (MX3)n M′X4-n wherein M and M′are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M′is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.