초록

Selective electroless plating of cobalt or nickel is utilized to form conductive plugs in high-aspect-ratio vias in VLSI devices. Particularly good results are obtained when an active or catalytic film is formed on the via bottoms to serve as a plating base.

대표청구항 ▼

A selective electroless plating method of forming microminiature conductive plugs in high-aspect-ratio vias defined in a dielectric layer disposed on one main planar surface of a wafer in which integrated-circuit devices are to be fabricated, at least one of said vias having at the bottom thereof an

A selective electroless plating method of forming microminiature conductive plugs in high-aspect-ratio vias defined in a dielectric layer disposed on one main planar surface of a wafer in which integrated-circuit devices are to be fabricated, at least one of said vias having at the bottom thereof an active layer comprising a material selected from the group consisting of tantalum silicide and titanium silicide, said method comprising the step of immersing said wafer in a plating bath comprising a metallic source that provides ions selected from the group consisting of cobalt and nickel.