초록 ▼

A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semicon

A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semiconductor switching device, respectively. A control signal is applied to the control terminal of the output-nearest switching element. The semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row; and a second capacitive element connected between the output terminal and input terminal of the input-nearest switching element. At least the switching elements (S2-Sn) have insulating gates, respectively.

대표청구항 ▼

A semiconductor switching device including a row of a plurality of switching elements (Sl-Sn) connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element Sn and an output terminal of the output-nearest s

A semiconductor switching device including a row of a plurality of switching elements (Sl-Sn) connected in series between an input and an output terminal of said semiconductor switching device, an input terminal of the input-nearest switching element Sn and an output terminal of the output-nearest switching element Sl among said row being connected with said input terminal and said output terminal of said semiconductor switching device, respectively, and a control signal being applied to a control terminal of the output-nearest switching element, wherein said semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row, and a second capacitive element connected between the output terminal and input terminal of said input-nearest switching element, said switching elements (S2-Sn) having insulating gates, respectively, wherein a constant voltage element is connected between a control terminal and one of the inpt and output terminals of at least each of said switching elements other than the output-nearest one, each said constant voltage element being arranged so that it will be in series with said first and second capacitive elements when said switching elements are turned-off.