초록 ▼

A silver-glass composition for use in attaching a semiconductor support and a method for making the attachment are disclosed. The glass component of the composition is a low melting point glass comprising about 75-85 wt. % lead oxide, about 8-15% boron oxide, about 0.75 to 2.5 wt. % silicon-dioxide,

A silver-glass composition for use in attaching a semiconductor support and a method for making the attachment are disclosed. The glass component of the composition is a low melting point glass comprising about 75-85 wt. % lead oxide, about 8-15% boron oxide, about 0.75 to 2.5 wt. % silicon-dioxide, 0-10 wt. % zinc oxide, 0 to 3 wt. % alumina, 0.5 to 5.5 wt. % cuprousoxide and a non-volatile metal fluoride in amount such that the mol ratio of cuprous oxide to the fluoride content of the metal fluoride is in the range 1.0:0.25 to 1.0:10. The weight ratio of silver to glass in the composition is in the range about 2:1 to 9:1.

대표청구항 ▼

A composition for use in bonding a semiconductor device to a ceramic support comprising a mixture of: (a) powdered silver metal; (b) powdered low melting glass consisting essentially of about 75-85 wt. % lead oxide, about 8-15 wt. % boron oxide, about 0.75 to 2.5 wt. % silicon dioxide, 0 to 10 wt. %

A composition for use in bonding a semiconductor device to a ceramic support comprising a mixture of: (a) powdered silver metal; (b) powdered low melting glass consisting essentially of about 75-85 wt. % lead oxide, about 8-15 wt. % boron oxide, about 0.75 to 2.5 wt. % silicon dioxide, 0 to 10 wt. % zinc oxide, 0-5 wt. % bismuth oxide, 0 to 3 wt. % alumina, 0.5 to 5.5 wt. % cuprous oxide and a non-volatile metal fluoride in amount such that the mol ratio of cuprous oxide to the fluoride content of the metal fluoride is in the range of 1.0:0.25 to 1.0:10, and having a DTA softening point in the range about 260°C.-280°C., the weight ratio of (a) to (b) being in the range about 2:1 to 9:1.