초록 ▼

A process for curing and densifying a sol-gel derived inorganic thin film at lower temperatures (between 10°C. and 400°C.) by applying the films to a substrate, drying the film at a low temperature, exposing the film to a low pressure plasma. The film may be an oxide (e.g. SiO2), nitride (e.g. Si3N4

A process for curing and densifying a sol-gel derived inorganic thin film at lower temperatures (between 10°C. and 400°C.) by applying the films to a substrate, drying the film at a low temperature, exposing the film to a low pressure plasma. The film may be an oxide (e.g. SiO2), nitride (e.g. Si3N4), oxynitride (e.g. SiOxNy) or sulfide (e.g. GeS2).

대표청구항 ▼

A process for producing a cured and densified thin film comprising: a. coating a substrate with a plasma curable and densifiable film; b. drying the film at ambient temperature; and c. exposing the film to an atmosphere containing a curing and densifying plasma at a low pressure, at a power level, a

A process for producing a cured and densified thin film comprising: a. coating a substrate with a plasma curable and densifiable film; b. drying the film at ambient temperature; and c. exposing the film to an atmosphere containing a curing and densifying plasma at a low pressure, at a power level, at a temperature below 400°C., and for a time adapted to impart curing and densifying properties to the film; wherein the plasma curable and densifiable film is selected from the group consisting of: a. the oxides of silicon, aluminum, titanium, lead, lanthanum, zirconium, barium titanate and mixtures thereof where the plasma is formed from oxygen or nitrogen; b. the oxynitrides of silicon and aluminum and mixtures thereof where the plasma is formed from nitrogen; and c. the sulfides of titanium and germanium and mixtures thereof where the plasma is formed from H2S.