초록 ▼

A preferred semiconductor gas sensor of this invention features a gas interaction site comprising a gas sensitive semiconductor thin film and means for heating the film to an operative temperature. The thin film and heating means are carried upon a region of a substrate that is etched opposite the s

A preferred semiconductor gas sensor of this invention features a gas interaction site comprising a gas sensitive semiconductor thin film and means for heating the film to an operative temperature. The thin film and heating means are carried upon a region of a substrate that is etched opposite the site to reduce the thickness of the region and thereby reduce heat flow from the region into a surrounding region.

대표청구항 ▼

A gas sensor device for detecting a species in an ambient gas and having a localized, thermally isolated gas interaction site, said device comprising a silicon substrate including a film support region at said gas interaction site and a region adjacent the film support region, said substrate being e

A gas sensor device for detecting a species in an ambient gas and having a localized, thermally isolated gas interaction site, said device comprising a silicon substrate including a film support region at said gas interaction site and a region adjacent the film support region, said substrate being etchedly recessed opposite the gas interaction site such that the thickness of the film support region is substantially reduced relative to the adjacent region, an electrically insulative coating overlying the substrate film support region, a gas sensitive semiconductor thin film supported upon the insulative coating at said gas interaction site and situated for exposure to ambient gas, and means at the gas interaction site for selectively heating the gas sensitive thin film to a temperature operative for detecting the species, whereby heat flow from the gas interaction site through the substrate is substantially reduced as a result of the reduced thickness of the substrate film support region.