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Method for vacuum vapor deposition with improved mass flow control 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0915174 (1986-10-03)
발명자 / 주소
  • Barbee Steven G. (Dover Plains NY) Devine Gregory P. (Poughquag NY) Patrick William J. (Newburgh NY) Seeley Gerard (Wappingers Falls NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 61  인용 특허 : 9

초록

A method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gaseous materia

대표청구항

A method of forming a layer of material upon the surface of an object, said material being deposited from a gas, said method comprising: heating a reservoir to a temperature sufficient to vaporize a material from which said gas is formed; creating a vacuum in a reactor containing said object to caus

이 특허에 인용된 특허 (9)

  1. Jolly Stuart Talbot (Yardley PA), Accurate control during vapor phase epitaxy.
  2. Blair Richard F. (Fountain Valley CA) Beazley Ralph (Rancho Palos Verdes CA), Calibratable system for measuring fluid flow.
  3. Rose John W. (Scottsdale AZ), Deposition and diffusion source control means and method.
  4. Suzuki Toshiyuki (Tokyo JPX) Nakamura Kazuo (Tokyo JPX), Gas discharge device comprising a pressure controller for controlling a pressure over a wide range.
  5. Burt Dan L. (Phoenix AZ) Taraci Richard F. (Phoenix AZ) Zavion John E. (Mesa AZ), Method for forming a deposited silicon dioxide layer on a semiconductor wafer.
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  7. Takagi Toshinori (Nagaokakyo JPX), Thin-film deposition.
  8. McMenamin Joseph C. (Fresno CA), Vapor mass flow control system.
  9. McMenamin Joseph C. (Oceanside CA), Vapor mass flow control system.

이 특허를 인용한 특허 (61)

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  57. Yuuki Tomohiro,JPX, Pyrogenic wet thermal oxidation of semiconductor wafers.
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