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High vacuum gate valve having improved metal vacuum joint 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F16K-025/00
  • F16K-031/52
출원번호 US-0040198 (1987-04-20)
발명자 / 주소
  • Contin Jose L. (Orinda CA)
출원인 / 주소
  • MDC Vacuum Products Corporation (Hayward CA 02)
인용정보 피인용 횟수 : 78  인용 특허 : 2

초록

A two part high vacuum gate valve construction includes a control mechanism part having a limited displacement stem passing through a first generally rectangular high vacuum flange and a valve body part including a generally rectangular case, a second generally rectangular high vacuum joint providin

대표청구항

A two part high vacuum gate valve construction comprising a control mechanism part and a valve body part, the control mechanism part including a linearly translatable control stem shaft, and a first generally rectangular high vacuum joint providing flange having a central opening through which the s

이 특허에 인용된 특허 (2)

  1. Faria Carl R. (San Leandro CA), Gate valve with slideable closure expandable upon oscillation.
  2. Williams Kenneth R. (Huntington Beach CA) McClaran Mark R. (Orange CA) Giacobbi Peter D. (Villa Park CA), Toggle gate valve.

이 특허를 인용한 특허 (78)

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  7. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  8. Lafferty ; Sr. Theodore B. (303 Fabiola Ave. Lafayette LA 70508), Engine air intake shutoff apparatus.
  9. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  10. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.
  11. Yang, Li-Chuan; Huang, Shu-Mei, Gate valve with secure sealing mechanism.
  12. Yang, Li-Chuan; Huang, Shu-Mei, Gate valve with secure sealing mechanism.
  13. Reynolds Calvin E. (2700 Sterling Way Cameron Park CA 95682), High vacuum valve.
  14. Ishigaki Tsuneo,JPX ; Waragai Kenji,JPX, High-vacuum valve.
  15. Contin, Jose L.; Ulea, Neli, High-vacuum valve with retractable valve plate to eliminate abrasion.
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  17. Shugrue, John; Moen, Ron, Lockout tagout for semiconductor vacuum valve.
  18. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
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  22. Brenes, Arthur J., Method and apparatus for locking a valve.
  23. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.
  24. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  25. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.
  26. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.
  27. Kang, DongSeok, Method for depositing thin film.
  28. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.
  29. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.
  30. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.
  31. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.
  32. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.
  33. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.
  34. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.
  35. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.
  36. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.
  37. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  38. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  39. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
  40. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  41. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  42. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  43. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  44. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
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  47. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.
  48. Crawford, Charles K, Minimal thickness, double-sided flange for insertion between two ultra-high vacuum flanges.
  49. Crawford, Charles K., Minimal thickness, double-sided flanges for ultra-high vacuum components.
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  51. Nakamura Yoshinobu (Tokyo JPX) Hayashi Yuzo (Tokyo JPX), Non-sliding vacuum gate valve.
  52. Brenes,Arthur J., Pendulum gate valve.
  53. Crawford Charles K., Perimeter weld flanges.
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  55. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  56. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  57. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  58. Winkler, Jereld Lee, Pulsed remote plasma method and system.
  59. Zhu, Chiyu, Selective film deposition method to form air gaps.
  60. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  61. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.
  62. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  63. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
  64. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  65. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.
  66. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  67. Whitesell Andrew B., Substrate handling and processing system and method.
  68. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  69. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.
  70. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
  71. Crawford Charles K. (Wilton NH), Vacuum system components.
  72. Rudolf Wagner CH, Vacuum system with a vacuum plate valve.
  73. Gantner, Urs; Litscher, Bernhard, Valve having a sealing member.
  74. B��sch,Hubert, Valve mechanism for a vacuum valve.
  75. Coureau Jean C. (Morangis FRX), Valve-control device and valve having such a control device.
  76. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.
  77. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
  78. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.
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