초록 ▼

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

대표청구항 ▼

A photovoltaic cell, comprising: a. a transparent superstrate; b. a layer of transparent conductive oxide formed on said superstrate; c. a superlattice p-layer of amorphous silicon carbide formed on said conductive oxide layer, said p-layer including a plurality of first and second lattices alternat

A photovoltaic cell, comprising: a. a transparent superstrate; b. a layer of transparent conductive oxide formed on said superstrate; c. a superlattice p-layer of amorphous silicon carbide formed on said conductive oxide layer, said p-layer including a plurality of first and second lattices alternatingly formed on one another, each of said first and second lattices having a thickness of approximately 12-30 Å, each of said first lattices having a first optical bandgap greater than or equal to about 2.25 eV, and each said second lattices having a second optical bandgap of about 1.7-2.0 eV. d. an i-layer of amorphous silicon formed on said p-layer; e. an n-layer of amorphous silicon formed on said i-layer; and f. a back contact layer of conductive material formed on said n-layer.