$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0873582 (1986-06-12)
발명자 / 주소
  • Posa John G. (Lake Oswego OR)
출원인 / 주소
  • Crystal Specialties, Inc. (Portland OR 02)
인용정보 피인용 횟수 : 137  인용 특허 : 0

초록

Apparatus for producing a constant flow, constant pressure chemical vapor deposition includes a manifold having inlet valves for simultaneously switching equal flows of reactive and nonreactive gas between a process chamber and a vent chamber. A constant flow through the process chamber during a dep

대표청구항

An apparatus for depositing material on a substrate, comprising: a process chamber; a plurality of gas sources each providing a gas flow; manifold means for directing gases selectively from the gas sources to the process chamber, the manifold means having first and second inlets for receiving gases

이 특허를 인용한 특허 (137)

  1. Wang, Chang-Gong; Shero, Eric; Wilk, Glen, ALD of metal silicate films.
  2. Wang, Chang-Gong; Shero, Eric; Wilk, Glen, ALD of metal silicate films.
  3. Bondestam, Niklas; Lindfors, Sven, ALD reactor and method with controlled wall temperature.
  4. Raaijmakers, Ivo, Apparatus and method for growth of a thin film.
  5. Raaijmakers, Ivo, Apparatus and method for growth of a thin film.
  6. Raaijmakers,Ivo, Apparatus and method for growth of a thin film.
  7. Raaijmakers,Ivo, Apparatus and method for growth of a thin film.
  8. Thakur, Randhir P. S.; Mak, Alfred W.; Xi, Ming; Glenn, Walter Benjamin; Khan, Ahmad A.; Al-Shaikh, Ayad A.; Gelatos, Avgerinos V.; Umotoy, Salvador P., Apparatus for cyclical depositing of thin films.
  9. Bondestam, Niklas; Kesala , Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.
  10. Bondestam, Niklas; Kesala, Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.
  11. Bondestam, Niklas; Kesälä, Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.
  12. Kilpi, Vaino, Apparatus for growing thin films.
  13. Kilpi, Vaino, Apparatus for growing thin films.
  14. Derderian, Garo J.; Sandhu, Gurtej S., Apparatus for improved delivery of metastable species.
  15. Page ; Jr. Theron V. (Lake Oswego OR) Boydston Thomas F. (Tualatine OR) Posa John G. (Tigard OR), Apparatus to provide a vaporized reactant for chemical-vapor deposition.
  16. Page ; Jr. Theron V. (Lake Oswego OR) Boydston Thomas F. (Tualatine OR) Posa John G. (Tigard OR), Apparatus to provide a vaporized reactant for chemical-vapor deposition.
  17. Williams, Michael; Barthman, Michael, Arrangement and method for abating effluent from a process.
  18. Li, Wei-Min, Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits.
  19. Mäntymäki, Miia; Ritala, Mikko; Leskelä, Markku, Atomic layer deposition of aluminum fluoride thin films.
  20. Li, Dong; Marcus, Steven; Haukka, Suvi P.; Li, Wei-Min, Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds.
  21. Chu, Xinsheng; Kang, Ming-Du, Cassette optimized for an inline annealing system.
  22. Chae, Yongkee; Fu, Jianming, Chemical vapor deposition tool and process for fabrication of photovoltaic structures.
  23. Raaijmakers,Ivo; Haukka,Suvi P.; Saanila,Yille A.; Soininen,Pekka J.; Elers,Kai Erik; Granneman,Ernst H. A., Conformal lining layers for damascene metallization.
  24. Raaijmakers, Ivo; Haukka, Suvi P.; Granneman, Ernst H. A., Conformal thin films over textured capacitor electrodes.
  25. Raaijmakers, Ivo; Haukka, Suvi P.; Granneman, Ernst H. A., Conformal thin films over textured capacitor electrodes.
  26. Bauer, Matthias; Thomas, Shawn G., Cyclical epitaxial deposition and etch.
  27. Derderian,Garo J.; Sandhu,Gurtej S., Deposition methods for improved delivery of metastable species.
  28. Todd, Michael A., Deposition of amorphous silicon-containing films.
  29. Blomberg, Tom E.; Anttila, Jaakko, Deposition of smooth metal nitride films.
  30. Blomberg, Tom E.; Anttila, Jaakko, Deposition of smooth metal nitride films.
  31. Wang, Chang-Gong; Shero, Eric, Doping with ALD technology.
  32. Rahtu, Antti; Tois, Eva; Elers, Kai-Erik; Li, Wei-Min, Enhanced thin film deposition.
  33. Rahtu, Antti; Tois, Eva; Elers, Kai-Erik; Li, Wei-Min, Enhanced thin film deposition.
  34. Rahtu, Antti; Tois, Eva; Elers, Kai-Erik; Li, Wei-Min, Enhanced thin film deposition.
  35. Bauer, Matthias, Epitaxial deposition of doped semiconductor materials.
  36. Kordina, Olof Claes Erik; Berge, Rune, Epitaxial growth system for fast heating and cooling.
  37. Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
  38. Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
  39. Suzuki, Toshiya; Pore, Viljami J., Formation of SiOCN thin films.
  40. Suzuki, Toshiya; Pore, Viljami J., Formation of SiOCN thin films.
  41. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  42. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  43. Fukazawa, Atsuki, Formation of silicon-containing thin films.
  44. Moore, Gary M., Gas flow controller system.
  45. Matuno Shunichi,JPX ; Kakimoto Yoshiyuki,JPX, Gas pressure regulation in vapor deposition.
  46. Nishino, Kouji; Dohi, Ryousuke; Nagase, Masaaki; Hirata, Kaoru; Sugita, Katsuyuki; Ikeda, Nobukazu, Gas supply system for semiconductor manufacturing facilities.
  47. Werkhoven, Christiaan J.; Raaijmakers, Ivo; Haukka, Suvi P., Graded thin films.
  48. Werkhoven, Christiaan J.; Raaijmakers, Ivo; Haukka, Suvi P., Graded thin films.
  49. Shero, Eric J.; Verghese, Mohith; Maes, Jan Willem, High concentration water pulses for atomic layer deposition.
  50. Provencher, Timothy J.; Hickson, Craig B., High temperature ALD inlet manifold.
  51. Bauer, Matthias, High throughput cyclical epitaxial deposition and etch process.
  52. Shero, Eric J.; Pomarede, Christophe, Incorporation of nitrogen into high k dielectric film.
  53. Shero, Eric J; Pomarede, Christophe, Incorporation of nitrogen into high k dielectric film.
  54. Shero,Eric J.; Pomarede,Christophe, Incorporation of nitrogen into high k dielectric film.
  55. Hong, Sukwon; Tran, Toan; Mallick, Abhijit; Liang, Jingmei; Ingle, Nitin K., Low shrinkage dielectric films.
  56. Lofgren Peter,SEX ; Gu Chun Yuan,SEX ; Hallin Christer,SEX ; Liu Yujing,SEX, Method and a device for epitaxial growth of objects by chemical vapor deposition.
  57. Strang, Eric J., Method and apparatus for gas injection system with minimum particulate contamination.
  58. Williams, Michael; Barthman, Michael, Method for abating effluent from an etching process.
  59. Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
  60. Satta, Alessandra; Maex, Karen; Elers, Kai-Erik; Saanila, Ville Antero; Soininen, Pekka Juha; Haukka, Suvi P., Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
  61. Satta, Alessandra; Maex, Karen; Elers, Kai-Erik; Saanila, Ville Antero; Soininen, Pekka Juha; Haukka, Suvi P., Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
  62. Raaijmakers, Ivo; Soininen, Pekka T.; Granneman, Ernst H. A.; Haukka, Suvi P., Method for controlling conformality with alternating layer deposition.
  63. Rossman Kent, Method for deposition of a conformal layer on a substrate.
  64. Watabe Masahiro,JPX, Method for growing a semiconductor layer.
  65. Sano, Atsushi; Itatani, Hideharu; Tanabe, Mitsuro, Method for manufacturing semiconductor device and method for processing substrate.
  66. Jan Snijders, Gert; Raaijmakers, Ivo, Method for vaporizing non-gaseous precursor in a fluidized bed.
  67. Moore, Gary M., Method of controlling gas flow to a semiconductor processing reactor.
  68. Werkhoven, Christiaan J.; Raaijmakers, Ivo; Haukka, Suvi P., Method of forming graded thin films using alternating pulses of vapor phase reactants.
  69. Van Nooten, Sebastian E.; Maes, Jan Willem; Marcus, Steven; Wilk, Glen; Räisänen, Petri; Elers, Kai-Erik, Method of forming non-conformal layers.
  70. Ivo Raaijmakers NL; Yong-Bae Kim ; Marko Tuominen FI; Suvi P. Haukka FI, Method of forming ultrathin oxide layer.
  71. Raaijmakers, Ivo; Kim, Yong-Bae; Tuominen, Marko; Haukka, Suvi P., Method of forming ultrathin oxide layer.
  72. Raaijmakers, Ivo; Haukka, Suvi P.; Saanila, Ville A.; Soininen, Pekka J.; Elers, Kai-Erik; Granneman, Ernst H. A., Method of making conformal lining layers for damascene metallization.
  73. Joo,Kwang Chul, Method of manufacturing flash memory device.
  74. Haukka, Suvi; Huotari, Hannu, Method of producing thin films.
  75. Bauer, Matthias; Bartlett, Gregory M, Methods and apparatus for a gas panel with constant gas flow.
  76. Bauer, Matthias, Methods of depositing electrically active doped crystalline Si-containing films.
  77. Kim, Jong Su; Park, Hyung Sang; Yoo, Yong Min; Kwon, Hak Yong; Yoon, Tae Ho, Methods of forming an amorphous silicon thin film.
  78. Basceri,Cem, Methods of gas delivery for deposition processes and methods of depositing material on a substrate.
  79. Bauer, Matthias; Weeks, Keith Doran; Tomasini, Pierre; Cody, Nyles, Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition.
  80. Bauer,Matthias; Weeks,Keith Doran; Tomasini,Pierre; Cody,Nyles, Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition.
  81. Kools, Jacques Constant Stefan, Modular gas injection device.
  82. Kools, Jacques Constant Stefan, Modular gas injection device.
  83. Rozenzon, Yan; Trujillo, Robert T.; Beese, Steven C., Multi-channel gas-delivery system.
  84. Elers, Kai Erik; Marcus, Steven, Passivated stoichiometric metal nitride films.
  85. Milligan, Robert B., Periodic plasma annealing in an ALD-type process.
  86. Blomberg, Tom E.; Huotari, Hannu, Photoactive devices and materials.
  87. Elers, Kai Erik, Plasma-enhanced ALD of tantalum nitride films.
  88. Milligan, Robert B.; Li, Dong; Marcus, Steven, Plasma-enhanced atomic layer deposition of conductive material over dielectric layers.
  89. Milligan, Robert B.; Li, Doug; Marcus, Steven, Plasma-enhanced atomic layers deposition of conductive material over dielectric layers.
  90. Elers, Kai-Erik; Wilk, Glen; Marcus, Steven, Plasma-enhanced deposition of metal carbide films.
  91. Raisanen, Petri; Marcus, Steven, Plasma-enhanced deposition process for forming a metal oxide thin film and related structures.
  92. Li, Dong; Marcus, Steven; Wilk, Glen; Milligan, Brennan, Plasma-enhanced pulsed deposition of metal carbide films.
  93. Todd, Michael A.; Hawkins, Mark, Process for deposition of semiconductor films.
  94. Ivo Raaijmakers NL; Pekka T. Soininen FI; Ernst H. A. Granneman NL; Suvi P. Haukka FI, Protective layers prior to alternating layer deposition.
  95. Raaijmakers, Ivo; Soininen, Pekka T.; Granneman, Ernst H. A.; Haukka, Suvi P., Protective layers prior to alternating layer deposition.
  96. Dunn, Todd; White, Carl; Halpin, Mike; Shero, Eric; Terhorst, Herbert; Winkler, Jerry, Pulsed valve manifold for atomic layer deposition.
  97. Preti,Franco; Ogliari,Vincenzo; Tarenzi,Giuseppe, Reaction chamber for an epitaxial reactor.
  98. Leycuras, Andre, Reactor and method for chemical vapor deposition.
  99. Raaijmakers, Ivo; Soininen, Pekka T.; Granneman, Ernst; Haukka, Suvi; Elers, Kai-Erik; Tuominen, Marko; Sprey, Hessel; Terhorst, Herbert; Hendriks, Menso, Sealing porous structures.
  100. Bauer, Matthias; Arena, Chantal; Bertram, Ronald; Tomasini, Pierre; Cody, Nyles; Brabant, Paul; Italiano, Joseph; Jacobson, Paul; Weeks, Keith Doran, Selective deposition of silicon-containing films.
  101. Bauer, Matthias; Weeks, Keith Doran, Selective epitaxial formation of semiconductive films.
  102. Bauer, Matthias; Weeks, Keith Doran, Selective epitaxial formation of semiconductor films.
  103. Bauer, Mathias, Separate injection of reactive species in selective formation of films.
  104. Bauer, Matthias, Separate injection of reactive species in selective formation of films.
  105. Arthur Sherman, Sequential chemical vapor deposition.
  106. Sherman, Arthur, Sequential chemical vapor deposition.
  107. Sherman, Arthur, Sequential chemical vapor deposition.
  108. Sherman, Arthur, Sequential chemical vapor deposition.
  109. Sherman, Arthur, Sequential chemical vapor deposition.
  110. Sherman,Arthur, Sequential chemical vapor deposition.
  111. Chen, Jerry; Machkaoutsan, Vladimir; Milligan, Brennan; Maes, Jan Willem; Haukka, Suvi; Shero, Eric; Blomberg, Tom E.; Li, Dong, Silane and borane treatments for titanium carbide films.
  112. Chen, Jerry; Machkaoutsan, Vladimir; Milligan, Brennan; Maes, Jan; Haukka, Suvi; Shero, Eric; Blomberg, Tom; Li, Dong, Silane and borane treatments for titanium carbide films.
  113. Chen, Jerry; Machkaoutsan, Vladimir; Milligan, Brennan; Maes, Jan; Haukka, Suvi; Shero, Eric; Blomberg, Tom; Li, Dong, Silane and borane treatments for titanium carbide films.
  114. Shero, Eric; Haukka, Suvi, Silane or borane treatment of metal thin films.
  115. Shero, Eric; Haukka, Suvi, Silane or borane treatment of metal thin films.
  116. Rossman, Kent, Staggered in-situ deposition and etching of a dielectric layer for HDP CVD.
  117. Rossman,Kent, Staggered in-situ deposition and etching of a dielectric layer for HDP CVD.
  118. Rossman,Kent, Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD.
  119. Thomas, Shawn; Tomasini, Pierre, Stressor for engineered strain on channel.
  120. Bauer, Matthias, Structure comprises an As-deposited doped single crystalline Si-containing film.
  121. Shero,Eric J.; Givens,Michael E.; Schmidt,Ryan, Sublimation bed employing carrier gas guidance structures.
  122. Jackson Paul D., Substrate carrier having a streamlined shape and method for thin film formation.
  123. Doley, Allan; Goodwin, Dennis; O'Neill, Kenneth; Vrijburg, Gerben; Rodriguez, David; Aggarwal, Ravinder, Substrate handling chamber.
  124. Sano, Atsushi; Itatani, Hideharu; Tanabe, Mitsuro, Substrate processing apparatus and method for manufacturing semiconductor device.
  125. Aggarwal, Ravinder; Conner, Rand; Disanto, John; Alexander, James A., Substrate reactor with adjustable injectors for mixing gases within reaction chamber.
  126. Zajac, Piotr, System and method for curing conductive paste using induction heating.
  127. Doley Allan ; Goodwin Dennis ; O'Neill Kenneth ; Vrijburg Gerben ; Rodriguez David, System and method for reducing particles in epitaxial reactors.
  128. Tuominen, Marko; Shero, Eric; Verghese, Mohith, System for controlling the sublimation of reactants.
  129. Nishikawa Kazuyasu,JPX ; Tomohisa Shingo,JPX, System for manufacturing a semiconductor device.
  130. Sung, Edward; Zu-Yi Liu, James, Systems, method and apparatus for curing conductive paste.
  131. Sung, Edward; Zu-Yi Liu, James, Systems, method and apparatus for curing conductive paste.
  132. Haukka, Suvi P.; Raaijmakers, Ivo; Li, Wei Min; Kostamo, Juhana; Sprey, Hessel; Werkhoven, Christiaan J., Thin films.
  133. Haukka,Suvi P.; Raaijmakers,Ivo; Li,Wei Min; Kostamo,Juhana; Sprey,Hessel, Thin films.
  134. Todd, Michael A.; Raaijmakers, Ivo, Thin films and methods of making them.
  135. Haukka, Suvi; Givens, Michael; Shero, Eric; Winkler, Jerry; Räisänen, Petri; Asikainen, Timo; Zhu, Chiyu; Anttila, Jaakko, Titanium aluminum and tantalum aluminum thin films.
  136. Elers, Kai Erik, Vapor deposition of metal carbide films.
  137. White, Carl L.; Shero, Eric, Vapor flow control apparatus for atomic layer deposition.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트