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Chemical vapor deposition of zinc oxide films and products 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B32B-009/00
  • B32B-019/00
  • C23C-016/40
출원번호 US-0024871 (1987-03-12)
발명자 / 주소
  • Vijayakumar Pantham S. (Granada Hills CA) Blaker Kimberly A. (Granada Hills CA) Wieting Robert D. (Simi Valley CA) Wong Boon (Reseda CA) Halani Arvind T. (Canoga Park CA)
출원인 / 주소
  • Atlantic Richfield Company (Los Angeles CA 02)
인용정보 피인용 횟수 : 90  인용 특허 : 0

초록

Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element.

대표청구항

A zinc oxide film having a resistivity of less than 2.5×10-3 ohm-centimeter and a thickness of up to 2 microns, and which is characterized by having been deposited on a substrate by the introduction of: (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzi

이 특허를 인용한 특허 (90)

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