이 특허를 인용한 특허 (43)

1. Grimm, Michael; Chen, Jun, Adaptive cascode circuit using MOS transistors.

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2. Grimm, Michael; Chen, Jun, Adaptive cascode circuit using MOS transistors.

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3. Mauder, Anton; Hirler, Franz, Cascode circuit.

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4. Tognoni Keith I. (Leominster MA), Cathode ray tube deflection circuit with solid state switch.

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5. Liu, Jing-Meng, Circuit and method for short circuit protection.

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6. Weis, Rolf, Circuit arrangement having a first semiconductor switch and a second semiconductor switch.

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7. Weis, Rolf; Deboy, Gerald, Circuit arrangement with a rectifier circuit.

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8. Weis, Rolf; Deboy, Gerald, Circuit arrangement with a rectifier circuit.

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9. Weis, Rolf; Deboy, Gerald, Circuit arrangement with a rectifier circuit.

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10. Jacobs Mark E. ; Thottuvelil Vijayan J. ; Timm Kenneth J., Controller for a power switch and method of operation thereof.

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11. Jacobs Mark E. ; Thottuvelil Vijayan J. ; Timm Kenneth J., Controller for a power switch and method of operation thereof.

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12. Jacobs Mark E. ; Thottuvelil Vijayan J. ; Timm Kenneth J., Controller for a power switch and method of operation thereof.

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13. Klas-Hakan Eklund SE, Coupling for active semi-conductor components.

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14. Heijden, Mark Peter; Leenaerts, Dominicus; Apostolidou, Melina, Electronic circuit with cascode amplifier.

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15. Bhutta, Imran Ahmed, Electronically variable capacitor and RF matching network incorporating same.

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16. Pobanz, Carl Walter, FET active load and current source.

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17. Ezzeddine Amin K. (Plainsboro NJ), High frequency switching device.

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18. Bhutta, Imran Ahmed, High speed high voltage switching circuit.

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19. Lee, Edward K. F., High voltage current source and voltage expander in low voltage process.

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20. Killat, Dirk, High voltage push-pull driver on standard CMOS.

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21. Bhutta, Imran, High voltage switching circuit.

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22. Ayasli Yalcin (Lexington MA) Katzin Peter J. (Arlington MA), High-power rf switching system.

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23. Gruber, Berthold; Hehn, Lars, Integrated circuit having a predefined dielectric strength.

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24. Weis, Rolf, Integrated circuit with at least two switches.

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25. Wright Michael E. (Berkeley CA), Level and edge sensitive input circuit.

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26. Williams Richard K. ; Grabowski Wayne B., Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact.

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27. Hajimiri, Seyed-Ali; Kee, Scott D.; Aoki, Ichiri, Multi-cascode transistors.

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28. Williams Richard K., Power MOSFET having voltage-clamped gate.

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29. Bhutta, Imran Ahmed, RF impedance matching network.

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30. Bhutta, Imran Ahmed, RF impedance matching network.

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31. Bhutta, Imran Ahmed, RF impedance matching network.

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32. Bhutta, Imran Ahmed, RF impedance matching network.

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33. Mavretic, Anton, RF impedance matching network.

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34. Mavretic, Anton, RF impedance matching network.

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35. Shiraki, Satoshi; Ban, Hiroyuki; Yamada, Akira, Semiconductor device and method for manufacturing the same.

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36. Weis, Rolf; Hirler, Franz; Feldtkeller, Martin; Deboy, Gerald; Stecher, Matthias; Willmeroth, Armin, Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices.

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37. Weis, Rolf; Hirler, Franz; Feldtkeller, Martin; Deboy, Gerald; Stecher, Matthias; Willmeroth, Armin, Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices.

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38. Weis, Rolf; Hirler, Franz; Feldtkeller, Martin; Deboy, Gerald; Stecher, Matthias; Willmeroth, Armin, Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices.

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39. Mavretic, Anton, Switching circuit.

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40. Mavretic, Anton, Switching circuit.

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41. Mavretic, Anton, Switching circuit for RF currents.

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42. Hasegawa, Kohei; Yasuzumi, Takenori, Switching unit and power supply circuit.

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43. Hasegawa, Kohei; Yasuzumi, Takenori, Switching unit and power supply circuit.

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