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Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium)

Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

대표청구항 ▼

A process for producing solar grade silicon by reaction of gaseous silicon tetrafluoride with sodium in substantially stoichiometric quantities to produce a reaction product from which silicon is recovered and wherein said silicon tetrafluoride gas used in the reaction is obtained by thermal decompo

A process for producing solar grade silicon by reaction of gaseous silicon tetrafluoride with sodium in substantially stoichiometric quantities to produce a reaction product from which silicon is recovered and wherein said silicon tetrafluoride gas used in the reaction is obtained by thermal decomposition of sodium fluosilicate which is precipitated from aqueous fluosilicic acid generated from phosphate rock conversion to fertilizer, said process comprising: (a) introducing sodium into a first compartment inside a reactor section, said first compartment formed with passages therethrough, said passages being of a size for vapor transport therethrough; (b) introducing sodium fluosilicate into a second compartment inside said reactor section adjacent said passages through said first compartment whereby vapor transport takes place between said first and said second compartments; and (c) heating said sodium fluosilicate thereby thermally to decompose said sodium fluosilicate and form sodium fluoride and silicon tetrafluoride vapor whereby silicon tetrafluoride vapor is transported through said passages into said first compartment thereby to form reaction product with said sodium, which reaction product includes sodium fluoride and substantially pure silicon; (d) collecting said reaction product in a melt separation third compartment in said reactor section; (e) separating said silicon in said third compartment by means of passages therethrough, which passages are sized to prevent flow of molten silicon therethrough but to permit substantially all other molten reaction products to pass; (f) collecting the molten reaction products passing through said passages in said third compartment in a reaction product collecting and dispensing fourth compartment which substantially surrounds said reaction third compartment; (g) continuously removing said reaction products from said reaction product collection and dispensing fourth compartment for recycling in the process; and (h) continuously removing molten silicon from said third compartment by free flow.