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Etching method for producing an electrochemical cell in a crystalline substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • B44C-001/22
  • C03C-015/00
  • C23F-001/02
출원번호 US-0073739 (1987-07-15)
발명자 / 주소
  • Holland Christopher E. (Redwood City CA) Westerberg Eugene R. (Palo Alto CA) Madou Marc J. (Palo Alto CA) Otagawa Takaaki (Fremont CA)
출원인 / 주소
  • SRI International (Menlo Park CA 02)
인용정보 피인용 횟수 : 61  인용 특허 : 0

초록 ▼

A method is set forth of constructing an electrochemical cell from a crystalline slab having front and back sides facing generally away from one another. Masking layers are provided covering the front and back sides of the slab and a back resist layer is provided covering the front masking layer, th

대표청구항 ▼

A method of constructing an electrochemical cell in a crystalline slab having front and back sides facing generally away from one another, comprising: (a) providing first front and first back masking layers of a first thickness covering, respectively, said front and back sides and a front resist lay

이 특허를 인용한 특허 (61)

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  60. Braymen Steven D. (Ames IA) Paulson Bradley A. (Ames IA) Goedken Kenneth D. (Dubuque IA), Use of sol-gel derived tantalum oxide as a protective coating for etching silicon.
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