초록 ▼

A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source

A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic of indium and bismuth.

대표청구항 ▼

An apparatus for heating semiconductor substrates, comprising: a heating container having a thermally conductive flat wall for heating of semiconductor substrates; support means for supporting at least one semiconductor substrate against the external surface of said container wall at a substrate hea

An apparatus for heating semiconductor substrates, comprising: a heating container having a thermally conductive flat wall for heating of semiconductor substrates; support means for supporting at least one semiconductor substrate against the external surface of said container wall at a substrate heating location; a heat transfer means comprising a low melting point, high boiling point metal contained within said container at least to the level of the top of the substrate heating location and in contact with said wall for uniformly transferring heat to said container and said substrate heating location; and heating means for heating said heat transfer means whereby heat is transferred from said heating means through said metal to said container wall to heat said external surface of said container wall to a substantially uniform temperature across said substrate heating location.