초록 ▼

A method is disclosed for forming a detector device, such as a thinned bulk silicon blocked impurity transducer infrared detector, by thinning a semiconductor substrate (10) and processing the thinned region (30) on two sides to form the detector device. The semiconductor substrate (10) is thinned t

A method is disclosed for forming a detector device, such as a thinned bulk silicon blocked impurity transducer infrared detector, by thinning a semiconductor substrate (10) and processing the thinned region (30) on two sides to form the detector device. The semiconductor substrate (10) is thinned to form a cavity (26) in the substrate (10). Further processing on both sides of the thinned region (30) is performed while the thinned region is still connected to the thicker substrate. The thinned region (30) is then separated from the substrate (10) upon completion of the given processing steps. The device is then mounted to a readout device (58).

대표청구항 ▼

A method of forming a detector device having a thinned region from a semiconductor substrate of larger thickness defined by first and second major surfaces, said method comprising the steps of: (a) forming a cavity in the substrate substrate to provide a thinned region therein having a third surface

A method of forming a detector device having a thinned region from a semiconductor substrate of larger thickness defined by first and second major surfaces, said method comprising the steps of: (a) forming a cavity in the substrate substrate to provide a thinned region therein having a third surface generally parallel to the first surface; (b) implanting ions to form implanted layers of a given dopant concentration on the first, second and third surfaces; (c) annealing the substrate and implanted layers; (d) depositing metal onto the implanted layers of the first, second and third surfaces; (e) selectively removing metal and portions of the implanted layer to form a plurality of contacts on the first surface; (f) selectively removing metal from the third surface in areas opposite the contacts to form a light shield in the areas between the contacts; and (g) separating the thinned region from the substrate whereby the processing of the thinned region can easily be performed on two sides prior to mounting it to a readout device.