초록 ▼

In a reduced pressure gaseous phase thin film growth device, in which the pressure within a bubbler is detected during bubbling of an organo-metallic compound and depending on the pressure thus detected, a pressure difference valve disposed between a pipe for introducing trimethylaluminium gas and a

In a reduced pressure gaseous phase thin film growth device, in which the pressure within a bubbler is detected during bubbling of an organo-metallic compound and depending on the pressure thus detected, a pressure difference valve disposed between a pipe for introducing trimethylaluminium gas and a reduced pressure reactor is controlled so that the pressure within the bubbler is kept to be constant.

대표청구항 ▼

In a reduced pressure gaseous phase thin film growth method, in which an organo-metallic compound gas is supplied from a carrier gas passed through a bubbler containing an organo-metallic compound and thereafter passed through a pressure difference generator to a reactor, the improvement wherein sai

In a reduced pressure gaseous phase thin film growth method, in which an organo-metallic compound gas is supplied from a carrier gas passed through a bubbler containing an organo-metallic compound and thereafter passed through a pressure difference generator to a reactor, the improvement wherein said method comprises; the step of detecting the pressure within said bubbler; and the step of controlling said pressure difference generator responsively to the value of the pressure thus detected, so that the pressure within said bubbler is kept constant.