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특허 상세정보

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Method and apparatus for the deposition of solid films of a material from a jet stream entraining the gaseous phase of s

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C23C-016/00   
미국특허분류(USC) 427/2481 ; 427/249 ; 427/250 ; 427/2551
출원번호 US-0888590 (1985-12-12)
발명자 / 주소
인용정보 피인용 횟수 : 98  인용 특허 : 3
초록
▼

Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site of synthesis to a prepared substrate material, and (3) condensation and subsequent film growth. The transport step is achieved by admixing small concentrations of the depositing species into the flow of a high speed jet of an inert carrier gas. This jet impinges on the substra...

대표
청구항
▼

A method of depositing a condensible gaseous material entrained in an inert carrier gas as a solid onto a substrate surface unreactive to the condensible gaseous material comprising: (a) forming a stream of inert carrier gas; (b) generating the condensible gaseous component to be deposited on the substrate substantially contiguous to or within a means for forming a jet of the inert carrier gas; (c) transporting the condensible gaseous material and the stream of the inert carrier gas through the jet forming means toward the substrate; (d) decelerating the...

이 특허에 인용된 특허 (3)

  1. Kalbskopf Reinhard (Onex CHX) Baumberger Otto (Carouge CHX). Apparatus for continuously depositing a layer of a solid material on the surface of a substrate heated to a high tempera. USP1982094351267.
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  3. Ahmed Irfan (31 Bradford Rd. Framingham MA 01701). Method for etching and controlled chemical vapor deposition. USP1984084468283.

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