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A method of manufacturing a semiconductor device comprising a semiconductor body (1), of which a surface (13) is provided with a metallization (15,16,17,18) with a thick connection electrode (19). The metallization is formed in a first metal layer (49) and the connection electrode is formed in a sec

A method of manufacturing a semiconductor device comprising a semiconductor body (1), of which a surface (13) is provided with a metallization (15,16,17,18) with a thick connection electrode (19). The metallization is formed in a first metal layer (49) and the connection electrode is formed in a second metal layer (51). Between these metal layers is provided a third metal layer (50), which serves as an etching stopper during the formation of the connection electrode. During a single deposition step, the three metal layers (49,50,51) are provided, after which first the connection electrode and then the metallization are formed by etching. By providing the three metal layers in a single deposition step, the number of processing steps for manufacturing the semiconductor device is limited and it is moreover achieved that the adhesion between connection electrode (19) and metallization (15,16,17,18) is an optimum.

대표청구항 ▼

A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor body having respective transistor zones, forming an insulating layer on said semiconductor body, said insulating layer having openings to at least some of said transistor zones, successively forming at l

A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor body having respective transistor zones, forming an insulating layer on said semiconductor body, said insulating layer having openings to at least some of said transistor zones, successively forming at least three metal layers on said insulating layer, said at least three metal layers including a first thin metal layer, a second thick metal layer, and a third thin metal layer formed between said first thin metal layer and said second thick metal layer, Wherein said second thick metal layer is formed with a thickness ranging from about 30 to 60 m3-6 m0.1-0.3 m