초록 ▼

A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by

A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium. The polysilane may also be used for the deposition of hydrogenated amorphous silicon alloys.

대표청구항 ▼

A process for depositing hydrogenated amorphous silicon films onto a substrate comprising the steps of producing a gaseous polysilane-containing stream by exposure of a gaseous mixture comprising monosilane and inert gas at substantially atmospheric pressure to electric discharge in a first reaction

A process for depositing hydrogenated amorphous silicon films onto a substrate comprising the steps of producing a gaseous polysilane-containing stream by exposure of a gaseous mixture comprising monosilane and inert gas at substantially atmospheric pressure to electric discharge in a first reaction zone and contacting said polysilane-containing stream with said substrate in a second reaction zone separated from said first zone under conditions sufficient to deposit hydrogenated amorphous silicon film thereon.