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In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • B44C-001/22
출원번호 US-0147422 (1988-01-25)
발명자 / 주소
  • Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT)
출원인 / 주소
  • IBM Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 223  인용 특허 : 9

초록

An apparatus and method for monitoring the conductivity of a semiconductor wafer during the course of a polishing process. A polishing pad that contacts the wafer has an active electrode and at least one passive electrode, both of which are embedded in the polishing pad. A detecting device is connec

대표청구항

A method for monitoring the conductivity of a work piece during the course of a lapping process carried out in a lapping machine having a polishing pad that contacts the work piece, the polishing pad having an active electrode and at least one passive electrode contacting the work piece, comprising

이 특허에 인용된 특허 (9)

  1. Bennett Emeric S. (Chardon OH) Sauerland Franz L. (Shaker Heights OH), Apparatus for automatic lapping control.
  2. Sauerland Franz L. (2851 Southington Rd. Shaker Heights OH 44120), Apparatus for automatic lapping control.
  3. Sauerland Franz L. (2851 Southington Rd. Shaker Heights OH 44120), Apparatus for automatic lapping control.
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  9. Chen Lee (Poughkeepsie NY) Mathad Gangadhara S. (Poughkeepsie NY), Monitoring technique for plasma etching.

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