초록 ▼

A transistor (14) having a plurality of sub-transistors (29a-f) includes a voltage controlling device (45). The voltage controlling device induces a current through an elongated gate (24) producing a voltage drop across the elongated gate (24) by providing a path between the gate and ground (32). Th

A transistor (14) having a plurality of sub-transistors (29a-f) includes a voltage controlling device (45). The voltage controlling device induces a current through an elongated gate (24) producing a voltage drop across the elongated gate (24) by providing a path between the gate and ground (32). The voltage drop across the elongated gate (24) sequentially reduces the gate voltage present at each of the sub-transistors (29a-f), thereby reducing the amount of current which the sub-transistors (29a-f) can conduct. The voltage controlling circuit (45) gradually reduces the current through the gate (24), thereby increasing the amount of current flowing through the sub-transistors (29a-f). The limiting of current through the output transistors (29a-f) for a predetermined time interval reduces the generation of output noise by controlling the rate at which current is changing in that output.

대표청구항 ▼

A transistor circuit comprising: a substrate having semiconductor surface areas forming a plurality of transistor regions; a gate having a length and a predetermined resistance along said length and being disposed adjacent said semiconductor surface areas such that a gate signal applied to a first e

A transistor circuit comprising: a substrate having semiconductor surface areas forming a plurality of transistor regions; a gate having a length and a predetermined resistance along said length and being disposed adjacent said semiconductor surface areas such that a gate signal applied to a first end region of said gate propagates along the length of said gate in a predetermined time interval, the propagation of said gate signal along said gate causing conduction of ones of said transistor regions; a conducting device connected to a second end region of said gate to allow a transient current to pass from said first end region of said gate through said conducting device to cause a voltage drop across said gate, said voltage drop reducing the amount of current conducted by ones of said transistor regions; and a switching device connected to said conducting device, said switching device operable to inhibit or enable current through said conducting device, said switching device comprising a capacitor having first and second terminals said capacitor connected to said conducting device such that said conducting device will conduct in response to a change in said signal on said first terminal.