[특허]Semiconductor device having a silicon on insulator structure

Semiconductor device having a silicon on insulator structure 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-023/48 H01L-029/46 H01L-029/54 H01L-029/62
출원번호	US-0922907 (1986-10-24)
우선권정보	JP-0244433 (1985-10-31)
발명자 / 주소	Shirato Takehide (Hiratsuka JPX) Aneha Nobuhiko (Yokohama JPX)
출원인 / 주소	Fujitsu Limited (Kanagawa JPX 03)
인용정보	피인용 횟수 : 49 인용 특허 : 0

초록 ▼

A semiconductor device having an SOI structure comprises an insular single crystal silicon body formed on an insulator layer, a first region of a first type semiconductor and source and drain regions of a second type semiconductor provided in the insular single crystal silicon body so that the first region is provided between the source and drain regions, a second region of the first type semiconductor in contact with the first region formed along a side of the source and drain regions, and a contact region of the first type semiconductor having an impurity density higher than those of the first and second regions formed in contact with the second region, so that a fixed voltage can be applied to the first region via the contact region.

대표청구항 ▼

A semiconductor device having a silicon on insulator structure comprising: an insulator layer; an insular body formed on said insulator layer, said insular body being made of a single crystal silicon doped to a first type semiconductor; a first region of the first type semiconductor provided in said insular body; first and second doped regions doped to a second type semiconductor respectively provided in said insular body on both sides of said first region, said first and second doped regions reaching a bottom of said insular body and having a width smaller than a width of said insular body; a second region doped to the first type semiconductor formed along at least one side of said first and second doped regions, said second region being in contact with said first region; and a contact region doped to the first type semiconductor formed in contact with said second region, said contact region having an impurity density greater than those of said first and second regions, said first region being applied with a fixed voltage via said contact region.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
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연합인증

Semiconductor device having a silicon on insulator structure 원문보기

초록 ▼

대표청구항 ▼

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이 특허를 인용한 특허 (49)

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Semiconductor device having a silicon on insulator structure 원문보기

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대표청구항 ▼

연구과제 타임라인

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이 특허를 인용한 특허 (49)

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