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특허 상세정보

Pulsed plasma process for treating a substrate

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B05D-003/06   
미국특허분류(USC) 427/38 ; 427/451
출원번호 US-0117923 (1987-11-03)
우선권정보 GB-0005647 (1984-03-03)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 45  인용 특허 : 5
초록

In a pulsed radio frequency plasma deposition process the pulse repetition frequency is matched to the gas exchange rate. This is achieved by using a pulse width of 50 to 500 microseconds and a pulse repetition rate corresponding to the time within which gas is exchanged in the reaction region.

대표
청구항

In a process for surface treatment of a substrate material wherein the substrate is exposed under reduced pressure to a high intensity pulsed radio frequency plasma, and wherein the plasma pulse repetition frequency corresponds to the rate at which gas is exchanged adjacent the substrate, the improvement comprising: controlling the partial pressure of the active constituents of the plasma from about 10 to about 100 m torr; providing a plasma pulse width of 50 to 500 microseconds; and exposing the plasma to a power density of 100 to 1000 watts/cc such tha...

이 특허를 인용한 특허 피인용횟수: 45

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