초록 ▼

The present invention provides a method of treating a SIMOX wafer so that oxygen precipitates and heavy metal, carbon, and other contaminants are substantially reduced. The method includes forming a protective layer on the SIMOX surface, heating the wafer and protective layer so that the precipitate

The present invention provides a method of treating a SIMOX wafer so that oxygen precipitates and heavy metal, carbon, and other contaminants are substantially reduced. The method includes forming a protective layer on the SIMOX surface, heating the wafer and protective layer so that the precipitates and contaminants disolve and diffuse into the protective layer, and slowly cooling the wafer to permit continued diffusion during cooling.

대표청구항 ▼

A method of treating an article of separation by oxygen implantation (SIMOX) material to reduce the density of cyrstallographic defects by removing oxygen precipitates and contaminants therefrom, said article including a substrate, an implanted layer of silicon dioxide and a layer of a SIMOX silicon

A method of treating an article of separation by oxygen implantation (SIMOX) material to reduce the density of cyrstallographic defects by removing oxygen precipitates and contaminants therefrom, said article including a substrate, an implanted layer of silicon dioxide and a layer of a SIMOX silicon, the method comprising the steps of: (a) forming a protective silicon dioxide layer on said layer of SIMOX silicon to preclude oxidation of said SIMOX silicon during subsequent heating as set forth below in step (b); (b) heating said SIMOX article and said protective layer so that a significant portion of said precipitates and contaminants migrate toward and diffuse into said protective layer so that said cyrstallographic defects and contaminants are significantly reduced.