초록 ▼

A potentiometer includes a magnetoresistive element made of ferromagnetic material. A device applies a magnetic field to the magnetoresistive element. An absolute value of the magnetic field applied to the magnetoresistive element is equal to or greater than a saturation magnetic field with respect

A potentiometer includes a magnetoresistive element made of ferromagnetic material. A device applies a magnetic field to the magnetoresistive element. An absolute value of the magnetic field applied to the magnetoresistive element is equal to or greater than a saturation magnetic field with respect to the ferromagnetic magnetoresistive element. The magnetic field applying device is movable relative to the magnetoresistive element.

대표청구항 ▼

A potentiometer comprising: (a) a substrate; (b) a magnetoresistive element made of ferromagentic material formed as a substantially circular film on the substrate; (c) magnetic field applying means being magnetized along a width thereof and being spaced from the magnetoresistive element by a predet

A potentiometer comprising: (a) a substrate; (b) a magnetoresistive element made of ferromagentic material formed as a substantially circular film on the substrate; (c) magnetic field applying means being magnetized along a width thereof and being spaced from the magnetoresistive element by a predetermined cap and opposing a portion of the magnetoresistive element, for applying a first magnetic field to a portion of the magnetoresistive element opposing the field applying means, and for applying a second magnetic field to another portion of the magnetoresistive element, the first magnetic field extending in a vertical direction with respect to the substrate and the second magnetic field extending in a radial direction with respect to the magnetoresistive element said first and second magnetic fields being applied so that substantially all of the magneto resistive element is subjected to either the first magnetic field or the second magnetic field, wherein absolute values of the first and second magnetic fields applied to the magnetoresistive element are equal to or greater than the saturation magnetic field of the ferromagnetic magnetoresistive element; (d) rotating means for rotating the magnetoresistive element and the field applying means so that the field applying means moves along a circumferential direction of the magnetoresistive element in accordance with the rotation of the rotating means; and (e) detecting means for detecting a variation of the resistance of the magnetoresistive element cause by rotation of one of the magnetoresistive element and the field applying means, and for detecting said rotation of the magnetoresistive element and the field applying means.