초록 ▼

A reactor, suitable for CVD processes, which presents a high aspect ratio to reactant gasses, is described. Substrates are mounted on oppositely disposed susceptors in a vertical chimney-type reactor. Means are provided to rotate the susceptors about an axis perpendicular to gas flow. Side-loading o

A reactor, suitable for CVD processes, which presents a high aspect ratio to reactant gasses, is described. Substrates are mounted on oppositely disposed susceptors in a vertical chimney-type reactor. Means are provided to rotate the susceptors about an axis perpendicular to gas flow. Side-loading or top-loading mechanisms are provided for loading and unloading the susceptors through a gate valve. A diffuser below the reaction zone adjusts the gas flow into the reaction zone.

대표청구항 ▼

A chemical vapor deposition system for depositing a reactant from a flowing reactant gas introduced into a reactant chamber on a substrate mounted on a susceptor in said chamber comprising: (a) a reaction chamber for heating reacting gasses by a pair of opposing heatable susceptors to deposit a reac

A chemical vapor deposition system for depositing a reactant from a flowing reactant gas introduced into a reactant chamber on a substrate mounted on a susceptor in said chamber comprising: (a) a reaction chamber for heating reacting gasses by a pair of opposing heatable susceptors to deposit a reactant from said gasses on said substrate as said gasses are heated and pass to a region beyond said susceptors; and (b) the space between said suspceptors forming a reaction region at least one of said susceptors having means for mounting a substrate thereon with the substrate having an exposed surface facing the reaction region for deposition of said reactant on said exposed surface, the ratio of the lateral width of said susceptors transverse the direction of flow of reacting gasses to the distance between said opposing susceptors being greater than one; (c) rotator means for solely rotating at least one such susceptor with the substrate about an axis transverse the flow of reactant gasses; and (d) exhaust means for exhausting reactant gasses.