초록 ▼

A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) c

A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO3, the ion donor layer comprises Cr2O3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.

대표청구항 ▼

A solid state, non-volatile electrically programmable reversible variable resistance device comprising: (a) a pair of contact electrodes formed on an insulating surface; (b) a variable resistance layer comprising a material having a resistivity controllable by adjusting ion content thereof and physi

A solid state, non-volatile electrically programmable reversible variable resistance device comprising: (a) a pair of contact electrodes formed on an insulating surface; (b) a variable resistance layer comprising a material having a resistivity controllable by adjusting ion content thereof and physically contacting said pair of electrodes; (c) a blocking layer comprising a non-linear blocking barrier formed on said variable resistance layer; (d) a donor layer comprising an ion donor material for adjusting said ion content of said variable resistance material, said donor layer formed on said blocking layer; and (e) a gate electrode for generating an electric field to control flow of ions between said ion donor material and said variable resistance material, said gate electrode formed on said donor layer.