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Wafer and method of making same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05K-001/14
출원번호 US-0204997 (1988-06-08)
발명자 / 주소
  • Stopper Herbert (Orchard Lake MI) Perkins Cornelius C. (Brimingham MI)
출원인 / 주소
  • Mosaic Systems, Inc. (Troy MI 02)
인용정보 피인용 횟수 : 57  인용 특허 : 21

초록

Disclosed is a wafer substrate for integrated circuits 1 which by itself may be made either of conductive or non-conductive material. This substrate carries two planes or layers of patterned metal 19,20, thus providing two principal levels of interconnection. A programmable amorphous silicon insulat

대표청구항

A substrate for interconnecting a plurality of integrated circuits: a base wafer; a first power plane deposited on said base wafer; a thin dielectric plane deposited on said first power plane layer; a second power plane deposited on said dielectric plane layer; said first power plane, said dielectri

이 특허에 인용된 특허 (21)

  1. Morcom William R. (Melbourne Beach FL) Friedman Glenn M. (San Diego CA), Amorphous devices and interconnect system and method of fabrication.
  2. Bluhm ; Vernon A., Amorphous semiconductor memory device for employment in an electrically alterable read-only memory.
  3. Patel Vipin N. (Melbourne FL) Conarroe ; Jr. John L. (Melbourne Beach FL), Amorphous switching device with residual crystallization retardation.
  4. Lee James H. (Wappingers Falls NY) Satya Akella V. S. (Wappingers Falls NY) Ghatalia Ashwin K. (Essex Junction VT) Thomas Donald R. (Westford VT), Electrical defect monitor structure.
  5. Honn ; James J. ; Stuby ; Kenneth P., Electrical package for LSI devices and assembly process therefor.
  6. Pappas Nicholas L. (Sunnyvale CA), Flexible mounting support for wafer scale integrated circuits.
  7. Holmberg Scott H. (Escondido CA), High temperature amorphous memory device for an electrically alterable read-only memory.
  8. Tanimoto Masafumi (Mitaka JPX) Watanabe Takashi (Tokorozawa JPX) Ieda Nobuaki (Kodaira JPX) Murota Junichi (Kodaira JPX), Irreversible semiconductor switching element and semiconductor memory device utilizing the same.
  9. Chance Dudley A. (Danbury CT) Kopcsay Gerard V. (Yorktown Heights NY), LSI Chip carrier with buried repairable capacitor with low inductance leads.
  10. Kumurdjian Pierre (Saint Cheron FRX), Method for constructing devices with a storage action and having amorphous semiconductors.
  11. Kerr George (St Sebastien sur Loire FRX) Mheust Yves (Caen FRX), Method of manufacturing an integrated capacitor and device obtained by this method.
  12. Krajewski Ignacy (Poynton EN), Multilayer printed circuit boards.
  13. Neale Ronald G. (Indian Harbour Beach FL), PROM electrically written by solid phase epitaxy.
  14. Kasten Alan J. (Palm Bay FL), Reversibly programmable polycrystalline silicon memory element.
  15. Alspector Joshua (Westfield NJ) Kinsbron Eliezer (Highland Park NJ) Sternheim Marek A. (Livermore CA), Semiconductor integrated circuit capacitor.
  16. Warwick William Arthur (Winchester EN), Semiconductor integrated circuit devices.
  17. Hardee Kim C. (Manitou Springs CO), Single polycrystalline silicon memory cell.
  18. Chapel ; Jr. Roy W. (Edmonds WA) Gurol I. Macit (Seattle WA), Thermally isolated monolithic semiconductor die.
  19. Stopper Herbert (Orchard Lake MI) Flasck Richard A. (Rochester MI), Universal interconnection substrate.
  20. Stopper Herbert (Orchard Lake MI), Wafer including test lead connected to ground for testing networks thereon.
  21. Stopper Herbert (Orchard Lake MI), Wafer scale integrated circuit.

이 특허를 인용한 특허 (57)

  1. Hawley Frank W. (Campbell CA) Yen Yeouchung (San Jose CA), Above via metal-to-metal antifuse.
  2. Forouhi Abdul R. ; Hawley Frank W. ; McCollum John L. ; Yen Yeouchung, Above via metal-to-metal antifuses incorporating a tungsten via plug.
  3. Lan James J. D. ; Chiang Steve S. ; Shepherd William H. ; Wu Paul Y. F., Antifuse interconnect between two conducting layers of a printed circuit board.
  4. Zhang Guobiao ; Hu Chenming ; Chiang Steve S., Antifuse structure suitable for VLSI application.
  5. Go Ying (Palo Alto CA) McCollum John L. (Saratoga CA) Eltoukhy Abdelshafy A. (San Jose CA), Antifuse with improved antifuse material.
  6. McCollum John L., Antifuse with improved antifuse material.
  7. Nathan Richard J. (Morgan Hill CA) Lan James J. D. (Fremont CA) Chiang Steve S. (Saratoga CA), Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printe.
  8. Zabetakis, Daniel, Artificial dielectric composites by a direct-write method.
  9. Lan James J. D. ; Chiang Steve S. ; Wu Paul Y. F. ; Shepherd William H. ; Xie John Y. ; Jiang Hang, Ball grid array structure and method for packaging an integrated circuit chip.
  10. Yen Yeochung ; Chen Wenn-Jei ; Chiang Steve S. ; Forouhi Abdul Rahim, Circuits for ESD Protection of metal to-metal antifuses during processing.
  11. Nathan Richard J. ; Lan James J. D. ; Chiang Steve S. ; Wu Paul Y. F. ; Osann ; Jr. Robert, Device-under-test card for a burn-in board.
  12. Chen Wenn-Jei, Dielectric-polysilicon-dielectric-polysilicon-dielectric antifuse for field programmable logic application.
  13. Mohsen Amr M., Double-sided programmable interconnect structure.
  14. McCollum John L. ; Eltoukhy Abdelshafy A. ; Forouhi Abdul Rahim, Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers.
  15. Chua Hua-Thye (Los Altos CA) Chan Andrew K. (Palo Alto CA) Birkner John M. (Portola Valley CA) Whitten Ralph G. (San Jose CA) Bechtel Richard L. (Sunnyvale CA) Thomas Mammen (San Jose CA), Electrically programmable interconnect structure having a PECVD amorphous silicon element.
  16. Chua Hua-Thye ; Chan Andrew K. ; Birkner John M. ; Whitten Ralph G. ; Bechtel Richard L. ; Thomas Mammen, Electrically programmable interconnect structure having a PECVD amorphous silicon element.
  17. Audet, Jean; Budell, Timothy W.; Buffet, Patrick H., Electronic package having high density signal wires with low resistance.
  18. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Sato Nobuhiko,JPX, Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution.
  19. Forouhi Abdul R. ; Hawley Frank W. ; McCollum John L. ; Yen Yeouchung, Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug.
  20. Hawley Frank W. ; McCollum John L. ; Go Ying ; Eltoukhy Abdelshafy, Fabrication process for raised tungsten plug antifuse.
  21. Osann ; Jr. Robert (San Jose CA) Shaw ; Jr. George A. (Felton CA) Mohsen Amr M. (Saratoga CA), Field programmable circuit module.
  22. Chua Hua-Thye ; Chan Andrew K. ; Birkner John M. ; Whitten Ralph G. ; Bechtel Richard L. ; Thomas Mammen, Field programmable gate array having reproducible metal-to-metal amorphous silicon antifuses.
  23. McGowan John E. ; Plants William C. ; Landry Joel D. ; Kaptanoglu Sinan ; Miller Warren K., Flexible, high-performance static RAM architecture for field-programmable gate arrays.
  24. Manning H. Montgomery, Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry.
  25. Manning H. Montgomery, Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry.
  26. Manning H. Montgomery, Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry.
  27. Manning H. Montgomery, Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry.
  28. Manning, H. Montgomery, Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry.
  29. Mohsen Amr M., Interconnect substrate with circuits for field-programmability and testing of multichip modules and hybrid circuits.
  30. Forouhi Abdul R. (San Jose CA) Hawley Frank W. (Campbell CA) McCollum John L. (Saratoga CA) Yen Yeouchung (San Jose CA), Metal-to-metal antifuse with conductive.
  31. Hawley Frank W. ; Eltoukhy Abdelshafy A. ; McCollum John L., Metal-to-metal via-type antifuse.
  32. Lan James J. D. ; Chiang Steve S. ; Shepherd William H. ; Wu Paul Y. F. ; Xie John Y., Method and structure to interconnect traces of two conductive layers in a printed circuit board.
  33. Whitten Ralph G. ; Bechtel Richard L. ; Thomas Mammen ; Chua Hua-Thye ; Chan Andrew K. ; Birkner John M., Method for fabrication of programmable interconnect structure.
  34. Lan James J. D. ; Chiang Steve S. ; Wu Paul Y. F. ; Xie John Y., Method for supporting one or more electronic components.
  35. Chiang Steve S. ; Chen Wenn-Jei, Method of fabricating an antifuse.
  36. Hart Michael J. ; Look Kevin T. ; Karpovich Yakov, Method of forming multilayer amorphous silicon antifuse.
  37. Yeouchung Yen ; Chen Shih-Oh ; Fang Leuh ; Poon Elaine K. ; Kruger James B., Method of making a metal to metal antifuse.
  38. Yen Yeouchung (San Jose CA) Chen Shih-Oh (Los Altos CA), Method of making metal to metal antifuse.
  39. Hart Michael J. ; Look Kevin T. ; Karpovich Yakov, Multilayer amorphous silicon antifuse.
  40. Lan James J. D. ; Chiang Steve S. ; Wu Paul Y. F. ; Xie John Y., Multilayer board having insulating isolation rings.
  41. Breen, Tricia L.; Clevenger, Lawrence A.; Hsu, Louis L.; Wang, Li-Kong; Wong, Kwong Hon, Planar polymer transistor.
  42. Chen Wenn-Jei, Process ESD protection devices for use with antifuses.
  43. Gordon Kathryn E. ; Wong Richard J., Programmable interconnect structures and programmable integrated circuits.
  44. Gordon Kathryn E. ; Wong Richard J., Programmable interconnect structures and programmable integrated circuits.
  45. El Ayat Khaled A. (Cupertino CA) Bakker Gregory W. (Sunnyvale CA) Lien Jung-Cheun (San Jose CA) Plants William C. (Santa Clara CA) Kaptanoglu Sinan (San Carlos CA) Gopisetty Runip (Los Gatos CA) Chan, Programmable logic module and architecture for field programmable gate array device.
  46. Nathan Richard J. ; Lan James J. D. ; Chiang Steve S., Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect.
  47. Lan James J. D. ; Chiang Steve S. ; Shepherd William H. ; Wu Paul Y. F., Programmable/reprogrammable structure using fuses and antifuses.
  48. Hawley Frank W. ; McCollum John L. ; Go Ying ; Eltoukhy Abdelshafy, Raised tungsten plug antifuse and fabrication processes.
  49. Hawley Frank W. ; McCollum John L. ; Go Ying ; Eltoukhy Abdelshafy, Raised tungsten plug antifuse and fabrication processes.
  50. McCollum John L. ; Hawley Frank W., Reduced leakage antifuse fabrication method.
  51. McCollum John L. ; Hawley Frank W., Reduced leakage antifuse structure.
  52. Takagi Mariko,JPX ; Yoshii Ichiro,JPX ; Hama Kaoru,JPX ; Ikeda Naoki,JPX ; Yasuda Hiroaki,JPX, Semiconductor device equipped with antifuse elements and a method for manufacturing an FPGA.
  53. Okahashi Tatsuo (Sayama JPX) Naito Masao (Iruma JPX) Hasegawa Atsushi (Koganei JPX) Nakagawa Norio (Koganei JPX), Semiconductor devices and electronic system incorporating them.
  54. Mori Hiroyuki,JPX, Semiconductor integrated circuit having an improved arrangement of power supply lines to reduce noise occurring therein.
  55. Nishino Tomoki,JPX, Semiconductor wafer.
  56. Liu David K.-Y. (Cupertino CA) Chen Kueing-Long (Plano TX) Riemenschneider Bert R. (Murphy TX), Sublithographic antifuse.
  57. Shepherd William H. ; Chiang Steve S. ; Xie John Y., Use of conductive particles in a nonconductive body as an integrated circuit antifuse.
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