초록 ▼

A sputter enhanced ion implantation process is disclosed that uses to advantage the ion beam sputtering phenomenon to deposit layers of coatings on surfaces of interest simultaneously with ion implanting that surface, and that without the use of a separate evaporation system. The process can be appl

A sputter enhanced ion implantation process is disclosed that uses to advantage the ion beam sputtering phenomenon to deposit layers of coatings on surfaces of interest simultaneously with ion implanting that surface, and that without the use of a separate evaporation system. The process can be applied to almost any workpiece of varied geometries. The process can be used for the deposition of hard coatings as well as ion implanting soft solid lubricants into various substrates. The process is particularly suitable for improving the physical and chemical properties of workpieces exposed to excessive wear, erosion, corrosion and fatigue and workpieces benefitting from a reduced coefficient of friction, such as ball bearings, gears, toolings, orthopaedic surgical implants and the like.

대표청구항 ▼

Sputter enhanced ion implantation process comprising: (a) providing a fixture formed of a first material and designed to hold and present a workpiece to an ion beam; (b) placing said workpiece in operative association t said fixture; (c) exposing both said workpiece and said fixture to said ion beam

Sputter enhanced ion implantation process comprising: (a) providing a fixture formed of a first material and designed to hold and present a workpiece to an ion beam; (b) placing said workpiece in operative association t said fixture; (c) exposing both said workpiece and said fixture to said ion beam; (d) said ion beam striking said fixture causing a sputtered coating of said first material to be formed by sputtering on said workpiece while simultaneously therewith said ion beam striking said workpiece causing both said workpiece and said sputtered coating thereon to be ion implanted; (e) said workpiece being formed of a second material, and said ion implantation of said workpiece effecting an ion implanting yield in excess of 20 atomic percent; (f) said ion beam also effecting an implantation of ions of said first material into said workpiece while effecting ion implantation therein from said ion beam itself; (g) wherein relative exposure of said workpiece to the direct impact of said ion beam versus the impact of said sputtering from said fixture caused by the indirect impact of said ion beans on said workpiece is variable by the angle of incidence of said ion beam on the surface of said workpiece, and wherein said relative exposure of said workpiece also depends on the composition of said first material; and (h) wherein said workpiece is one of a group consisting of ball bearings and cylindrical toolings.