초록 ▼

An enclosed chamber is provided to confine wafers to be processed with an etchent gas, and requiring moisture at the surface of the wafer in order to initiate the etching. Gases flowed over the face of the wafer and may be flowed across the backside of the wafer to controllably produce or restrict t

An enclosed chamber is provided to confine wafers to be processed with an etchent gas, and requiring moisture at the surface of the wafer in order to initiate the etching. Gases flowed over the face of the wafer and may be flowed across the backside of the wafer to controllably produce or restrict the etching, according to the nature of the gas supplied and flowed across the wafer.

대표청구항 ▼

A method of controlling etching of the oxides on the front and back sides of a spinning wafer, comprising treating portions of one side of the wafer with a flow of inert gas as to minimize likelihood of any etching of the oxide on said one side, and simultaneously treating portions of the other side

A method of controlling etching of the oxides on the front and back sides of a spinning wafer, comprising treating portions of one side of the wafer with a flow of inert gas as to minimize likelihood of any etching of the oxide on said one side, and simultaneously treating portions of the other side of the wafer with an etchant gas to etch away portions of the oxide on said other side.