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Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/205
  • H01L-021/36
출원번호 US-0113565 (1987-10-26)
발명자 / 주소
  • Davis Robert F. (Raleigh NC) Carter
  • Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC)
출원인 / 주소
  • North Carolina State University (Raleigh NC 02)
인용정보 피인용 횟수 : 99  인용 특허 : 8

초록 ▼

The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth

대표청구항 ▼

A method of reproducibly controlling the growth of large single crystals of a single polytype of silicon carbide independent of the use of impurities as a primary mechanism for controlling polytype growth, and which crystals are suitable for use in producing electrical devices, the method comprising

이 특허에 인용된 특허 (8)

  1. Hsu George C. (La Crescenta CA) Rohatgi Naresh K. (W. Corine CA), Deposition method for producing silicon carbide high-temperature semiconductors.
    상세보기
  2. Connell G. A. Neville (Cupertino CA) Johnson Richard I. (Menlo Park CA), Method and apparatus for pretreating and depositing thin films on substrates.
    상세보기
  3. Vodakov Jury A. (prospekt Engelsa ; 69/1 ; kv. 35 Leningrad SU) Mokhov Evgeny N. (prospekt Energetikov ; 54 ; korpus 2 ; kv. 59 Leningrad SU), Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition techniqu.
    상세보기
  4. Saga Toshihiko (Saitama JPX) Makita Tsuyoshi (Saitama JPX) Hirono Hisao (Saitama JPX) Inao Akitaka (Saitama JPX), Method of and apparatus for supplying powdery material.
    상세보기
  5. Knippenberg Wilhelmus Franciscus (Eindhoven NL) Verspui Gerrit (Eindhoven NL), Method of manufacturing silicon carbide crystals.
    상세보기
  6. Addamiano, Arrigo, Method of preparing single crystalline cubic silicon carbide layers.
    상세보기
  7. Rice Dale W. (Horseheads NY), Particulate material feeder for high temperature vacuum system.
    상세보기
  8. Steiger ; Roger A. ; Stroke ; Frederick G., Porous refractory metal boride article having dense matrix.
    상세보기

이 특허를 인용한 특허 (99)

  1. Barrett Donovan L. (Penn Hills Township PA) Seidensticker ; deceased Raymond G. (late of Forest Hills PA by Joan Seidensticker ; heir ) Hopkins Richard H. (Murrysville PA), Apparatus for growing large silicon carbide single crystals.
    상세보기
  2. Snyder, David W.; Everson, William J., Axial gradient transport apparatus and process.
    상세보기
  3. Rengarajan, Varatharajan; Brouhard, Bryan K.; Nolan, Michael C.; Zwieback, Ilya, Axial gradient transport growth process and apparatus utilizing resistive heating.
    상세보기
  4. Carter Calvin H. ; Tsvetkov Valeri F. ; Glass Robert C., Colorless silicon carbide crystals.
    상세보기
  5. Carter Calvin H. ; Tsvetkov Valeri F. ; Glass Robert C., Colorless silicon carbide gemstones.
    상세보기
  6. Larkin David J. ; Neudeck Philip G. ; Powell J. Anthony ; Matus Lawrence G., Compound semi-conductors and controlled doping thereof.
    상세보기
  7. Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device and a method for epitaxially growing objects by CVD.
    상세보기
  8. Ellison Alex,SEX ; Kordina Olle,SEX ; Gu Chun-Yuan,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX ; Tuominen Marko,SEX, Device for epitaxially growing objects and method for such a growth.
    상세보기
  9. Ryu, Sei-Hyung; Agarwal, Anant K.; Ward, Allan, Edge termination structures for silicon carbide devices.
    상세보기
  10. Singh, Ranbir, Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same.
    상세보기
  11. Singh, Ranbir, Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same.
    상세보기
  12. Barrett Donovan L. ; Hopkins Richard H., Feedstock arrangement for silicon carbide boule growth.
    상세보기
  13. Loboda, Mark; Parfeniuk, Christopher, Flat SiC semiconductor substrate.
    상세보기
  14. Loboda, Mark; Parfeniuk, Christopher, Flat SiC semiconductor substrate.
    상세보기
  15. Laia ; Jr. Joseph R. ; Carroll David W. ; Trkula Mitchell ; Anderson Wallace E. ; Valone Steven M., Fluidized bed deposition of diamond.
    상세보기
  16. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-Shuang; Bergmann, Michael John, Group III nitride LED with silicon carbide cladding layer.
    상세보기
  17. Edmond,John Adam; Doverspike,Kathleen Marie; Bergmann,Michael John; Kong,Hua Shuang, Group III nitride contact structures for light emitting devices.
    상세보기
  18. Mueller, Stephan G.; Hobgood, Hudson M.; Tsvetkov, Valeri F., Halogen assisted physical vapor transport method for silicon carbide growth.
    상세보기
  19. Tischler Michael A. (83 Barclay Commons Danbury CT 06811), High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same.
    상세보기
  20. Barrett Donovan L. (Penn Hills Twp. PA) Hobgood Hudson M. (Murrysville PA) McHugh James P. (Wilkins Twp. PA) Hopkins Richard H. (Murrysville PA), High resistivity silicon carbide substrates for high power microwave devices.
    상세보기
  21. Loboda, Mark; Chung, Gilyong, High voltage power semiconductor device on SiC.
    상세보기
  22. Loboda, Mark; Chung, Gilyong, High voltage power semiconductor devices on SiC.
    상세보기
  23. Edmond,John Adam; Doverspike,Kathleen Marie; Bergmann,Michael John; Kong,Hua Shuang, Inverted light emitting diode on conductive substrate.
    상세보기
  24. Snyder, David W.; Everson, William J., Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals.
    상세보기
  25. Edmond,John A.; Doverspike,Kathleen M.; Bergmann,Michael J.; Kong,Hua Shuang, Light emitting diode with degenerate coupling structure.
    상세보기
  26. Edmond, John A.; Doverspike, Kathleen M.; Bergmann, Michael J.; Kong, Hua Shuang, Light emitting diode with metal coupling structure.
    상세보기
  27. Powell, Adrian; Brady, Mark; Mueller, Stephan G.; Tsvetkov, Valeri F.; Leonard, Robert T., Low 1C screw dislocation 3 inch silicon carbide wafer.
    상세보기
  28. Powell, Adrian; Brady, Mark; Mueller, Stephan G.; Tsvetkov, Valeri F.; Leonard, Robert T., Low 1C screw dislocation 3 inch silicon carbide wafer.
    상세보기
  29. Powell, Adrian; Brady, Mark; Mueller, Stephan G.; Tsvetkov, Valeri F.; Leonard, Robert T., Low 1C screw dislocation 3 inch silicon carbide wafer.
    상세보기
  30. Powell,Adrian; Brady,Mark; Tsvetkov,Valeri F., Low basal plane dislocation bulk grown SiC wafers.
    상세보기
  31. Vodakov, Yury Alexandrovich; Mokhov, Evgeny Nikolaevich; Ramm, Mark Grigorievich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Temkin,, Low defect axially grown single crystal silicon carbide.
    상세보기
  32. Nobuyuki Nagato JP; Kunio Komaki JP; Isamu Yamamoto JP; Naoki Oyanagi JP; Shigehiro Nishino JP, Method and apparatus for producing silicon carbide single crystal.
    상세보기
  33. de Heer, Walt A.; Li, Xuebin; Sprinkle, Michael, Method and apparatus for producing ultra-thin graphitic layers.
    상세보기
  34. Tsvetkov,Valeri F.; Malta,David P., Method and apparatus for the production of silicon carbide crystals.
    상세보기
  35. Loboda, Mark; Drachev, Roman; Hansen, Darren; Sanchez, Edward, Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion.
    상세보기
  36. Loboda, Mark, Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion.
    상세보기
  37. Barrett Donovan L. ; Seidensticker ; deceased Raymond G. ; Hopkins Richard H., Method for growing large silicon carbide single crystals.
    상세보기
  38. Vodakov, Yury Alexandrovich; Mokhov, Evgeny Nikolaevich; Ramm, Mark Grigorievich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Temkin,, Method for growing single crystal silicon carbide.
    상세보기
  39. Hansen, Darren; Loboda, Mark; Manning, Ian; Moeggenborg, Kevin; Mueller, Stephan; Parfeniuk, Christopher; Quast, Jeffrey; Torres, Victor; Whiteley, Clinton, Method for manufacturing SiC wafer fit for integration with power device manufacturing technology.
    상세보기
  40. Hansen, Darren; Loboda, Mark; Manning, Ian; Moeggenborg, Kevin; Mueller, Stephan; Parfeniuk, Christopher; Quast, Jeffrey; Torres, Victor; Whiteley, Clinton, Method for manufacturing SiC wafer fit for integration with power device manufacturing technology.
    상세보기
  41. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan; Tsvetkov, Valeri F., Method for producing semi-insulating resistivity in high purity silicon carbide crystals.
    상세보기
  42. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan; Tsvetokov, Valeri F., Method for producing semi-insulating resistivity in high purity silicon carbide crystals.
    상세보기
  43. Stein Rene,DEX ; Rupp Roland,DEX ; Volkl Johannes,DEX, Method for producing silicon carbide monocrystals.
    상세보기
  44. Dmitriev Vladimir A. (Fuquay-Varina NC) Rendakova Svetlana V. (St. Petersburg RUX) Ivantsov Vladimir A. (St. Petersburg RUX) Carter ; Jr. Calvin H. (Cary NC), Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structu.
    상세보기
  45. Barrett Donovan L. ; Hopkins Richard H. ; McHugh James P. ; Hobgood Hudson McDonald, Method of making a low resistivity silicon carbide boule.
    상세보기
  46. Palmour John W., Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures.
    상세보기
  47. Palmour John W. (Cary NC), Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures.
    상세보기
  48. Palmour John W. (Cary NC), Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures.
    상세보기
  49. Li, Si Yi; Zhu, Helen H.; Sadjadi, S. M. Reza; Pirkle, David R.; Bowers, James; Goss, Michael, Method of plasma etching of silicon carbide.
    상세보기
  50. Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Method of producing high quality silicon carbide crystal in a seeded growth system.
    상세보기
  51. Barrett Donovan L. ; Thomas Richard N. ; Seidensticker ; deceased Raymond G. ; Hopkins Richard H., Method of producing large diameter silicon carbide crystals.
    상세보기
  52. Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing silicon carbide single crystal.
    상세보기
  53. Kitou Yasuo,JPX ; Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing single crystals and a seed crystal used in the method.
    상세보기
  54. Kito Yasuo,JPX ; Kotanshi Youichi,JPX ; Onda Shoichi,JPX ; Hanazawa Tatuyuki,JPX ; Kitaoka Eiji,JPX, Method of producing single-crystal silicon carbide.
    상세보기
  55. Wang, Shaoping; Kopec, Aneta; Ware, Rodd Mitchell; Holmes, Sonia, Method of silicon carbide monocrystalline boule growth.
    상세보기
  56. Loboda, Mark, Method to reduce dislocations in SiC crystal growth.
    상세보기
  57. Mueller, Stephan, Methods of fabricating silicon carbide crystals.
    상세보기
  58. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
    상세보기
  59. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
    상세보기
  60. Ryu,Sei Hyung; Agarwal,Anant K., Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination.
    상세보기
  61. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
    상세보기
  62. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
    상세보기
  63. Sumakeris, Joseph John; Hobgood, Hudson McDonald; Paisley, Michael James; Jenny, Jason Ronald; Carter, Jr., Calvin H.; Tsvetkov, Valeri Fedorovich, Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby.
    상세보기
  64. Basceri, Cem; Khlebnikov, Yuri; Khlebnikov, Igor; Balkas, Cengiz; Silan, Murat N.; Hobgood, Hudson McD.; Carter, Jr., Calvin H.; Balakrishna, Vijay; Leonard, Robert T.; Powell, Adrian R.; Tsvetkov, Valeri T.; Jenny, Jason R., Micropipe-free silicon carbide and related method of manufacture.
    상세보기
  65. Basceri, Cem; Khlebnikov, Yuri; Khlebnikov, Igor; Balkas, Cengiz; Silan, Murat N.; Hobgood, Hudson McD.; Carter, Jr., Calvin H.; Balakrishna, Vijay; Leonard, Robert T.; Powell, Adrian R.; Tsvetkov, Valeri T.; Jenny, Jason R., Micropipe-free silicon carbide and related method of manufacture.
    상세보기
  66. Ryu,Sei Hyung; Agarwal,Anant K., Multiple floating guard ring edge termination for silicon carbide devices.
    상세보기
  67. Vodakov, Yury Alexandrovich; Mokhov, Evgeny Nikolaevich; Ramm, Mark Grigorievich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Temkin,, Niobium crucible fabrication and treatment.
    상세보기
  68. Leonard, Robert T.; Brady, Mark; Powell, Adrian, One hundred millimeter SiC crystal grown on off-axis seed.
    상세보기
  69. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valerl F., One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer.
    상세보기
  70. Hobgood,Hudson M.; Jenny,Jason R.; Malta,David Phillip; Tsvetkov,Valeri F.; Carter, Jr.,Calvin H.; Leonard,Robert Tyler; Fechko, Jr.,George J., One hundred millimeter single crystal silicon carbide wafer.
    상세보기
  71. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., One hundred millimeter single crystal silicon carbide wafer.
    상세보기
  72. Leonard,Robert Tyler; Powell,Adrian; Mueller,Stephan Georg; Tsvetkov,Valeri F., One hundred millimeter single crystal silicon carbide wafer.
    상세보기
  73. Sullivan Thomas M., Polycrystalline silicon carbide ceramic wafer and substrate.
    상세보기
  74. Sullivan Thomas M., Polycrystalline silicon carbide ceramic wafer and substrate.
    상세보기
  75. Powell, Adrian; Tsvetkov, Valeri F.; Brady, Mark; Leonard, Robert T., Process for producing high quality large size silicon carbide crystals.
    상세보기
  76. Carter, Jr., Calvin H.; Jenny, Jason R.; Malta, David P.; Hobgood, Hudson M.; Tsvetkov, Valeri F.; Das, Mrinal K., Process for producing silicon carbide crystals having increased minority carrier lifetimes.
    상세보기
  77. Carter, Jr., Calvin H.; Jenny, Jason R.; Malta, David P.; Hobgood, Hudson M.; Tsvetkov, Valeri F.; Das, Mrinal K., Process for producing silicon carbide crystals having increased minority carrier lifetimes.
    상세보기
  78. Masashi Shigeto JP; Kotaro Yano JP; Nobuyuki Nagato JP, Process for producing silicon carbide single crystal and production apparatus therefor.
    상세보기
  79. Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface.
    상세보기
  80. Robbins, Joshua; Seman, Michael, Production of bulk silicon carbide with hot-filament chemical vapor deposition.
    상세보기
  81. Tsvetkov,Valeri F.; Powell,Adrian; Mueller,Stephan Georg, Reduction of subsurface damage in the production of bulk SiC crystals.
    상세보기
  82. Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
    상세보기
  83. Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
    상세보기
  84. Jenny,Jason Ronald; Malta,David Phillip; Hobgood,Hudson McDonald; Mueller,Stephan Georg; Brady,Mark; Leonard,Robert Tyler; Powell,Adrian; Tsvetkov,Valeri F.; Fechko, Jr.,George J.; Carter, Jr.,Calvin H., Seeded single crystal silicon carbide growth and resulting crystals.
    상세보기
  85. Tsvetkov, Valeri F.; Hobgood, Hudson M.; Carter, Jr., Calvin H.; Jenny, Jason R., Semi-insulating silicon carbide produced by Neutron transmutation doping.
    상세보기
  86. Takahashi Jun,JPX ; Kanaya Masatoshi,JPX ; Fujiwara Yuichiro,JPX ; Ohtani Noboru,JPX, SiC single crystal and method for growth thereof.
    상세보기
  87. Loboda, Mark J.; Zhang, Jie, SiC substrate with SiC epitaxial film.
    상세보기
  88. Ryu, Sei-Hyung; Agarwal, Anant K., Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection.
    상세보기
  89. Sakaguchi,Yasuyuki; Takagi,Atsushi; Oyanagi,Naoki, Silicon carbide single crystal and method and apparatus for producing the same.
    상세보기
  90. Otsuki, Masashi; Maruyama, Takayuki; Endo, Shigeki; Kondo, Daisuke; Monbara, Takuya, Silicon carbide single crystal and production thereof.
    상세보기
  91. Emerson, David T., Substrate buffer structure for group III nitride devices.
    상세보기
  92. Helava,Heikki I.; Ramm,Mark G., Tantalum based crucible.
    상세보기
  93. Vodakov, Yury Alexandrovich; Mokhov, Evgeny Nikolaevich; Ramm, Mark Grigorievich; Roenkov, Alexandr Dmitrievich; Makarov, Yury Nikolaevich; Karpov, Sergei Yurievich; Ramm, Mark Spiridonovich; Temkin,, Tantalum crucible fabrication and treatment.
    상세보기
  94. Vodakov Yury Alexandrovich,RUX ; Mokhov Evgeny Nikolaevich,RUX ; Ramm Mark Grigorievich,RUX ; Roenkov Alexandr Dmitrievich,RUX ; Makarov Yury Nikolaevich,RUX ; Karpov Sergei Yurievich,RUX ; Ramm Mark, Technique for growing silicon carbide monocrystals.
    상세보기
  95. Powell,Adrian; Brixius,William H.; Leonard,Robert Tyler; McClure,Davis Andrew; Laughner,Michael, Three inch silicon carbide wafer with low warp, bow, and TTV.
    상세보기
  96. Emerson, David Todd; Abare, Amber Christine; Bergmann, Michael John, Ultraviolet light emitting diode.
    상세보기
  97. Emerson, David Todd; Abare, Amber Christine; Bergmann, Michael John, Ultraviolet light emitting diode.
    상세보기
  98. Emerson, David Todd; Abare, Amber Christine; Bergmann, Michael John, Ultraviolet light emitting diode.
    상세보기
  99. Liu,Deming; Fu,Ran, Wire clamping plate.
    상세보기

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