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Lapping slurry compositions with improved lap rate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24D-003/00
출원번호 US-0242231 (1988-09-09)
발명자 / 주소
  • Payne Charles C. (Aurora IL)
출원인 / 주소
  • Nalco Chemical Company (Naperville IL 02)
인용정보 피인용 횟수 : 44  인용 특허 : 4

초록

A concentrated lapping composition having the following makeup: ________________________________ - Ingredient % by Weight ________________________________ Finely divided inorganic 5-70 abrasive Carboxylic acid dispersant 0.1-1 polymer having a molecular weight of from 500-50,000 Lubricant 0.5-29 ___

대표청구항

A concentrated lapping composition having the following makeup: ________________________________ - Ingredient % by Weight ________________________________ Finely divided inorganic 5-70 abrasive Carboxylic acid dispersant 0.1-1 polymer having a molecular weight of from 500-50,000 Lubricant 0.5-29 ___

이 특허에 인용된 특허 (4)

  1. Chasman Jonathan N. (Shoreview MN) Hegel Ramon F. (St. Paul MN) Kendall Philip E. (Woodbury MN) Postma Nathan B. (White Bear Lake MN) Spencer Douglas S. (St. Paul MN), Coated abrasive suitable for use as a lapping material.
  2. Glemza Rimantas (Baltimore MD), Compositions for polishing silicon and germanium.
  3. Regler Dieter (Burghausen DEX) Moritz Alfred (Burghausen DEX), Lap cutting abrasive.
  4. Senda Tetsuji (Aichi JPX) Baba Takashi (Aichi JPX), Process for polishing surface of memory hard disc.

이 특허를 인용한 특허 (44)

  1. Kutsch V. Kim, Abrasive dental composition and method for use.
  2. Wang, Yuchun; Bajaj, Rajeev; Redeker, Fred C., Additives to CMP slurry to polish dielectric films.
  3. Carter, Phillip; Bogush, Gregory H.; De Rege, Francesco M.; Chamberlain, Jeffrey P.; Schroeder, David J.; Mueller, Brian L., Alkali metal-containing polishing system and method.
  4. Cherian, Isaac K.; Carter, Phillip; Chamberlain, Jeffrey P.; Moeggenborg, Kevin; Boldridge, David W., Anionic abrasive particles treated with positively charged polyelectrolytes for CMP.
  5. Cherian,Isaac K; Carter,Phillip; Chamberlain,Jeffrey P.; Moeggenborg,Kevin; Boldridge,David W., Anionic abrasive particles treated with positively charged polyelectrolytes for CMP.
  6. Hattori, Masayuki; Ando, Michiaki; Nishimoto, Kazuo; Kawahashi, Nobuo, Aqueous dispersion for chemical mechanical polishing.
  7. Schroeder, David J.; Moeggenborg, Kevin J.; Chou, Homer; Chamberlain, Jeffrey P.; Hawkins, Joseph D.; Carter, Phillip, CMP method utilizing amphiphilic nonionic surfactants.
  8. Wang, Yuchun; Bajaj, Rajeev; Redeker, Fred C., CMP slurry for planarizing metals.
  9. Yuchun Wang ; Rajeev Bajaj ; Fred C. Redeker, CMP slurry for planarizing metals.
  10. Rayo Mayoral, Patricia; Ancheyta Juárez, Jorge; Ramírez Solis, Jorge Fernando; Maity, Samir Kumar; Rana, Mohan Singh; Alonso Martínez, Fernando, Catalyst, its preparation and use for hydrodesulfurization of residua and heavy crudes.
  11. Wang, Yuchun; Bajaj, Rajeev; Redeker, Fred C.; Li, Shijian, Chemical mechanical polishing composition and process.
  12. Steckenrider, J. Scott; Mueller, Brian L., Chemical mechanical polishing slurry and method for using same.
  13. Lin Chienting ; Wang Juin-Fang ; Jamin Fen Fen ; Ramachandran Ravikumar, Composition and method for reducing dishing in patterned metal during CMP process.
  14. Grover Gautam S. ; Mueller Brian L., Composition for oxide CMP.
  15. Grover, Gautam S.; Mueller, Brian L.; Wang, Shumin, Composition for oxide CMP.
  16. Carter, Phillip; Bogush, Gregory H; Khan, Farhana; Johns, Timothy P; Vacassy, Robert, Compositions and methods for dielectric CMP.
  17. Grover,Gautam S.; Mueller,Brian L.; Wang,Shumin, Compositions for oxide CMP.
  18. Sun,Lizhong; Li,Shijian; Redeker,Fred C., Cu CMP polishing pad cleaning.
  19. O'Reilly, Kirk T.; Moir, Michael E.; O'Rear, Dennis J., Deactivatable biocides for hydrocarbonaceous products.
  20. O'Reilly, Kirk T.; Moir, Michael E.; O'Rear, Dennis J.; Buetzow, Mark R.; Dorsch, Brian V., Deactivatable biocides in ballast water.
  21. Wang,You; Tsai,Stan D.; Karuppiah,Lakshmanan; Diao,Jie; Jia,Renhe; Yilmaz,Alpay, Electrochemical method for Ecmp polishing pad conditioning.
  22. Sun, Lizhong; Li, Shijian, Electrochemically assisted chemical polish.
  23. Hunt,William J.; Kendall,Philip E.; Dahlke,Gregg D., Formulations for coated diamond abrasive slurries.
  24. O'Reilly, Kirk T.; Moir, Michael E.; O'Rear, Dennis J., Inhibition of biological degradation in fischer-tropsch products.
  25. O'Reilly, Kirk T.; Moir, Michael E.; O'Rear, Dennis J., Inhibition of biological degradation of Fischer-Tropsch products.
  26. Wang, Yuchun; Tsai, Stan D.; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Ion exchange materials for chemical mechanical polishing.
  27. Ji, Shuang, Lapping slurry having a cationic surfactant.
  28. Ko,Sen Hou; Song,Kevin H., Low cost and low dishing slurry for polysilicon CMP.
  29. Wang,Yan; Tsai,Stan D.; Hu,Yongqi; Liu,Feng Q.; Chen,Liang Yuh; Mao,Daxin; Tran,Huyen Karen; Wohlert,Martin S.; Jia,Renhe; Tian,Yuan A., Method and apparatus for reduced wear polishing pad conditioning.
  30. Sun,Lizhong; Tsai,Stan; Li,Shijian, Method and composition for the removal of residual materials during substrate planarization.
  31. Tsai, Stan; Sun, Lizhong; Li, Shijian, Method and composition for the selective removal of residual materials and barrier materials during substrate planarization.
  32. Lizhong Sun ; Shijian Li ; Fritz Redeker, Method for abrasive-free metal CMP in passivation domain.
  33. Schroeder, David J.; Carter, Phillip; Chamberlain, Jeffrey P.; Miller, Kyle; Cherian, Isaac K., Method for copper CMP using polymeric complexing agents.
  34. Yau, Wai-Fan; Cheung, David; Chopra, Nasreen Gazala; Lu, Yung-Cheng; Mandal, Robert; Moghadam, Farhad, Method of improving moisture resistance of low dielectric constant films.
  35. Carter, Phillip W.; Johns, Timothy P., Method of polishing a silicon-containing dielectric.
  36. Hsu, Wei-Yung; Prabhu, Gopalakrishna B.; Sun, Lizhong; Carl, Daniel A., Methods and compositions for chemical mechanical polishing.
  37. Small,Robert J.; Frey,Donald William; Tredinnick,Bruce; Hayden,Christopher G., Particulate or particle-bound chelating agents.
  38. Ramin Emami ; Shijian Li ; Sen-Hou Ko ; Fred C. Redeker ; Madhavi Chandrachood, Planarized Cu cleaning for reduced defects.
  39. Emami,Ramin; Li,Shijian; Ko,Sen Hou; Redeker,Fred C.; Chandrachood,Madhavi, Planarized copper cleaning for reduced defects.
  40. Kodate, Tadao, Plastic soft composition for polishing and for surface protective material application.
  41. Bunyan,Michael H.; Clement,Thomas A.; Hannafin,John J.; LaRosee,Marc E.; Young,Kent M., Polishing article for electro-chemical mechanical polishing.
  42. Luo, Qiuliang; Ye, Qianqiu; Block, Kelly H., Polishing of semiconductor substrates.
  43. Sun, Lizhong; Tsai, Stan D; Li, Shijian; White, John M, Solution to metal re-deposition during substrate planarization.
  44. O'Rear,Dennis J., Use of waste nitrogen from air separation units for blanketing cargo and ballast tanks.
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