초록 ▼

For cleaning substrates in a cleaning device, a reaction furnace of the cleaning device in which a substrate has been installed is evacuated and then supplied with a reducing gas, and a natural oxide film on the substrate is removed by heating it in an atmosphere of reducing gas, the reaction furnac

For cleaning substrates in a cleaning device, a reaction furnace of the cleaning device in which a substrate has been installed is evacuated and then supplied with a reducing gas, and a natural oxide film on the substrate is removed by heating it in an atmosphere of reducing gas, the reaction furnace is then is evacuated and a reactive gas is introduced into the reaction furnace, and contaminants on the substrate are removed by etching the substrate in the reactive gas that has been chemically activated by UV radiation.

대표청구항 ▼

A method of cleaning substrates comprising the steps of: (a) evacuating a reaction furnace of a substrate cleaning device in which a substrate has been installed; (b) introducing a reducing gas into said reaction furnace of a substrate cleaning device; (c) removing a natural oxide film on said subst

A method of cleaning substrates comprising the steps of: (a) evacuating a reaction furnace of a substrate cleaning device in which a substrate has been installed; (b) introducing a reducing gas into said reaction furnace of a substrate cleaning device; (c) removing a natural oxide film on said substrate by heating it in an atmosphere of reducing gas; (d) evacuating said reaction furnace; (e) introducing a reactive gas into said reaction furnace; and (f) removing contaminants on said substrate by etching said substrate in said reactive gas that has been chemically activated by UV radiation.