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A solid state imager device having an electronic shutter function suitable for use in a video camera or an electronic still camera to suppress brightness differences on TV screens between open and closed periods of the shutter having a semiconductor substrate of a first conductivity type, a region o

A solid state imager device having an electronic shutter function suitable for use in a video camera or an electronic still camera to suppress brightness differences on TV screens between open and closed periods of the shutter having a semiconductor substrate of a first conductivity type, a region of second conductivity type formed on the semiconductivity substrate of the first conductivity type and a signal charge accumulating region formed on the surface side of the second conductivity type region wherein, a predetermined voltage is applied to the semiconductor substrate of the first conductivity type and the signal charges accumulated in the signal charge accumulating region are discharged to the semiconductor substrate of the first conductivity type, whereby, the exposure time of the solid state imager device can be controlled so that when this imager device is used, for example, in a video camera, the video camera does not have to be provided with a mechanical shutter.

대표청구항 ▼

A method for utilizing a CCD image device as an electronic shutter for an electronic camera comprising the step of applying a voltage potential across a semiconductor substrate of a first conductivity type and a region of a second conductivity type formed upon said semiconductor substrate within a h

A method for utilizing a CCD image device as an electronic shutter for an electronic camera comprising the step of applying a voltage potential across a semiconductor substrate of a first conductivity type and a region of a second conductivity type formed upon said semiconductor substrate within a horizontal blanking period to thereby discharge signal charges accumulated in a signal charge accumulating region formed on a surface side of said region of a second conductivity type to said semiconductor substrate within said horizontal blanking period.