초록 ▼

A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than aaxGa1-xN (0

A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than aaxGa1-xN (0

대표청구항 ▼

A method of fabricating a single-crystal substrate of silicon carbide comprising: (a) forming a crystal substrate base layer selected from the group consisting of: (i) a single-crystal substrate ground layer of a nitride selected from the group consisting of Aln, GaN and Alx Ga1-xN wherein 0x1, said

A method of fabricating a single-crystal substrate of silicon carbide comprising: (a) forming a crystal substrate base layer selected from the group consisting of: (i) a single-crystal substrate ground layer of a nitride selected from the group consisting of Aln, GaN and Alx Ga1-xN wherein 0x1, said single crystal substrate ground layer having a hexagonal crystal structure, and (ii) a crystal layer of the same structure comprising a mixture of SiC and at least one of said nitrides present in an amount within the range of 0.1-10 mole % by total weight of said mixture on a single crystal substrate of a material selected from a group of materials not including alpha-SiC at a temperature from 1,200 to 1,600°C. by a CVD method; and (b) growing a single crystal of alpha-SiC on said ground layer.