초록 ▼

The present invention relates to gaseous phase synthesized diamond and a method of synthesizing the same. In order to obtain crystalline diamond having remarkably high completeness and hardly containing carbon having a construction other than that of diamond, raw material gases are thermally activat

The present invention relates to gaseous phase synthesized diamond and a method of synthesizing the same. In order to obtain crystalline diamond having remarkably high completeness and hardly containing carbon having a construction other than that of diamond, raw material gases are thermally activated by a thermoelectron-radiating material heated at an extremely high temperature, the thermoelectron-radiating material being connected to a negative pole while a substrate to be coated is connected to a positive pole, by the use of a direct current power source, a plasma being formed between the thermoelectron-radiating material and the substrate by applying a direct current voltage, and a diamond film having an average particle size of 2 microns or less, compression residual stress and electric resistance of 108 ohm.cm or more being formed on the substrate by using the activation by the thermoelectron-radiating material together with the activation by the formation of DC plasma. In addition, homogeneous diamond particles uniform in shape can be obtained by using this method.

대표청구항

A diamond film coated on a substrate, wherein an average particle size of the diamond is less than 2 microns, a half-width of a peak of 1344 cm-1 measured by the Raman spectrometric method is 50 cm-1 or less, and the coated diamond has an electric resistance of 108 ohmㆍcm or more.

A diamond film coated on a substrate, wherein an average particle size of the diamond is less than 2 microns, a half-width of a peak of 1344 cm-1 measured by the Raman spectrometric method is 50 cm-1 or less, and the coated diamond has an electric resistance of 108 ohmㆍcm or more.